SI5857DU-T1-GE3 Vishay, SI5857DU-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SI5857DU-T1-GE3
• Description: P CHANNEL MOSFET, -20V, 6A POWERPAK
• Manufacturer: Vishay

Specifications of SI5857DU-T1-GE3

• Transistor Polarity: P Channel + Schottky Diode
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 100mohm
• Rds(on) Test Voltage Vgs: 12V
• Configuration: Single Dual Drain
• Resistance Drain-source Rds (on): 0.058 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 5 A
• Power Dissipation: 2.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK ChipFET
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si5857DU
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
6
12
10
8
6
4
2
0
0
25
Package Limited
D
T
is based on T
C
Current Derating*
50
- Case Temperature (
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
°C
)
125
150
12
10
8
6
4
2
0
25
50
T
C
- Case Temperature (°C)
Power Derating
75
S09-2111-Rev. D, 12-Oct-09
Document Number: 73696
100
125
150