SI5857DU-T1-GE3 Vishay, SI5857DU-T1-GE3 Datasheet - Page 7

• Manufacturer Part Number: SI5857DU-T1-GE3
• Description: P CHANNEL MOSFET, -20V, 6A POWERPAK
• Manufacturer: Vishay

Specifications of SI5857DU-T1-GE3

• Transistor Polarity: P Channel + Schottky Diode
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 100mohm
• Rds(on) Test Voltage Vgs: 12V
• Configuration: Single Dual Drain
• Resistance Drain-source Rds (on): 0.058 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 5 A
• Power Dissipation: 2.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK ChipFET
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73696
S09-2111-Rev. D, 12-Oct-09
0.01
0.01
0.1
1
1
10
10
-4
0.02
-4
0.05
0.2
0.1
Duty Cycle = 0.5
0.1
0.2
Duty Cycle = 0.5
Single Pulse
0.05
10
-3
0.02
Normalized Thermal Transient Impedance, Junction-to-Ambient
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-1
10
-2
1
1
0
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
10
DM
JM
-1
- T
t
A
1
= P
Vishay Siliconix
t
2
DM
100
Z
thJA
Si5857DU
thJA
t
t
1
2
(t)
= 87 °C/W
www.vishay.com
1000
1
7