SI5857DU-T1-GE3 Vishay, SI5857DU-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI5857DU-T1-GE3
• Description: P CHANNEL MOSFET, -20V, 6A POWERPAK
• Manufacturer: Vishay

Specifications of SI5857DU-T1-GE3

• Transistor Polarity: P Channel + Schottky Diode
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 100mohm
• Rds(on) Test Voltage Vgs: 12V
• Configuration: Single Dual Drain
• Resistance Drain-source Rds (on): 0.058 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 5 A
• Power Dissipation: 2.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK ChipFET
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73696
S09-2111-Rev. D, 12-Oct-09
1.3
1.2
1.1
1.0
0.9
0.8
0.7
10
20
0.0
1
- 50
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
T
- Source-to-Drain Voltage (V)
J
0.4
Threshold Voltage
T
= 150 °C
J
25
- Temperature ( °C)
0.6
50
75
0.8
I
0.01
D
100
0.1
10
T
= 250 µA
100
1
J
0.1
= 25 °C
1.0
* V
I
Limited by R
D(on)
Safe Operating Area, Junction-to-Case
GS
125
Single Pulse
T
limited
A
> minimum V
= 25 °C
V
1.2
150
DS
DS(on)
- Drain-to-Source Voltage (V)
1
*
GS
BVDSS limited
at which R
DS(on)
IDM limited
10
0.16
0.14
0.12
0.10
0.08
0.06
0.04
30
25
20
15
10
5
0
0.001
is specified
2.0
100 ms
10 ms
1 s
10 s
DC
100 µs
1 ms
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.01
2.5
100
V
GS
T
A
- Gate-to-Source Voltage (V)
0.1
3.0
= 25 °C
T
Time (s)
A
3.5
= 125 °C
Vishay Siliconix
1
Si5857DU
4.0
10
www.vishay.com
I
D
= 3.6 A
100
4.5
1
5.0
0
0
0
5