BFP 450 H6327 Infineon Technologies, BFP 450 H6327 Datasheet - Page 15

• Manufacturer Part Number: BFP 450 H6327
• Description: RF Bipolar Small Signal RF BIP TRANSISTOR
• Manufacturer: Infineon Technologies

Specifications of BFP 450 H6327

• Dc Collector/base Gain Hfe Min: 60
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 24 GHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 10 mA
• Power Dissipation: 450 mW
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-343
• Mounting Type: Surface Mount
• Power - Max: 450mW
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Gain: 15.5dB
• Transistor Type: NPN
• Frequency - Transition: 24GHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 50mA, 4V
• Noise Figure (db Typ @ F): 1.25dB @ 1.8GHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFP450H6327XT

4.4
Figure 3
Figure 4
Data Sheet
Characteristic DC Diagrams
Collector Current vs. Collector Emitter Voltage
DC Current Gain
120
110
100
90
80
70
60
50
160
140
120
100
80
60
40
20
0.1
0
0
h
FE
=
f
(
I
1
C
),
1
V
CE
= 3 V
2
V
15
I
C
CE
[mA]
10
[V]
I
3
C
1.90mA
=
f
(
V
CE
1.71mA
100
),
I
4
B
1.52mA
1.33mA
1.14mA
0.95mA
0.76mA
0.57mA
0.38mA
0.19mA
= Parameter
Electrical Characteristics
Revision 1.0, 2010-10-22
5
1000
BFP450