BFP 450 H6327 Infineon Technologies, BFP 450 H6327 Datasheet - Page 25

• Manufacturer Part Number: BFP 450 H6327
• Description: RF Bipolar Small Signal RF BIP TRANSISTOR
• Manufacturer: Infineon Technologies

Specifications of BFP 450 H6327

• Dc Collector/base Gain Hfe Min: 60
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 24 GHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 10 mA
• Power Dissipation: 450 mW
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-343
• Mounting Type: Surface Mount
• Power - Max: 450mW
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Gain: 15.5dB
• Transistor Type: NPN
• Frequency - Transition: 24GHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 50mA, 4V
• Noise Figure (db Typ @ F): 1.25dB @ 1.8GHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFP450H6327XT

BFP450
Simulation Data
5
Simulation Data
For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please
refer to our internet website: www.infineon.com/rf.models. Please consult our website and download the latest
versions before actually starting your design.
You find the BFP450 SPICE GP model in the internet in MWO- and ADS-format, which you can import into these
circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is
ready to use for DC- and high frequency simulations. The terminals of the model circuit correspond to the pin
configuration of the device.
The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP450 SPICE
GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP
model itself.
Data Sheet
25
Revision 1.0, 2010-10-22