BFP 450 H6327 Infineon Technologies, BFP 450 H6327 Datasheet - Page 24
BFP 450 H6327
Manufacturer Part Number
BFP 450 H6327
Description
RF Bipolar Small Signal RF BIP TRANSISTOR
Manufacturer
Infineon Technologies
Datasheet
1.BFP_450_H6327.pdf
(27 pages)
Specifications of BFP 450 H6327
Dc Collector/base Gain Hfe Min
60
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
24 GHz
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
1.5 V
Continuous Collector Current
10 mA
Power Dissipation
450 mW
Maximum Operating Temperature
+ 150 C
Package / Case
SOT-343
Mounting Type
Surface Mount
Power - Max
450mW
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
4.5V
Gain
15.5dB
Transistor Type
NPN
Frequency - Transition
24GHz
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 50mA, 4V
Noise Figure (db Typ @ F)
1.25dB @ 1.8GHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFP450H6327XT
Figure 20
Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as
Data Sheet
a guarantee that all devices have identical characteristic curves. T
Comparison Noise Figure
4.5
3.5
2.5
1.5
0.5
4
3
2
1
0
20
NF
50
/
NF
40
min
=
24
I
c
f
[mA]
(
I
C
),
V
60
CE
= 3 V,
A
Z
Z
S
S
= 25°C.
f
= 50
= Z
80
= 1.9 GHz
Sopt
Electrical Characteristics
Revision 1.0, 2010-10-22
100
BFP450