BFP 450 H6327 Infineon Technologies, BFP 450 H6327 Datasheet - Page 23
BFP 450 H6327
Manufacturer Part Number
BFP 450 H6327
Description
RF Bipolar Small Signal RF BIP TRANSISTOR
Manufacturer
Infineon Technologies
Datasheet
1.BFP_450_H6327.pdf
(27 pages)
Specifications of BFP 450 H6327
Dc Collector/base Gain Hfe Min
60
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
24 GHz
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
1.5 V
Continuous Collector Current
10 mA
Power Dissipation
450 mW
Maximum Operating Temperature
+ 150 C
Package / Case
SOT-343
Mounting Type
Surface Mount
Power - Max
450mW
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
4.5V
Gain
15.5dB
Transistor Type
NPN
Frequency - Transition
24GHz
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 50mA, 4V
Noise Figure (db Typ @ F)
1.25dB @ 1.8GHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFP450H6327XT
Figure 18
Figure 19
Data Sheet
Noise Figure
Noise Figure
2.5
1.5
0.5
4.5
3.5
2.5
1.5
0.5
3
2
1
0
4
3
2
1
0
0
NF
NF
min
50
=
=
f
f
(
I
(
C
I
20
20
C
),
),
V
V
CE
CE
= 3 V,
= 3 V,
40
40
Z
Z
S
S
23
I
I
= 50 Ω
c
c
=
[mA]
[mA]
Z
opt
, f
, f
60
60
= Parameter in GHz
= Parameter in GHz
f = 2.4GHz
f = 1.9GHz
f = 0.9GHz
f = 0.45GHz
f = 2.4GHz
f = 1.9GHz
f = 0.9GHz
f = 0.45GHz
80
80
Electrical Characteristics
Revision 1.0, 2010-10-22
100
100
BFP450