BFP 450 H6327 Infineon Technologies, BFP 450 H6327 Datasheet - Page 20

• Manufacturer Part Number: BFP 450 H6327
• Description: RF Bipolar Small Signal RF BIP TRANSISTOR
• Manufacturer: Infineon Technologies

Specifications of BFP 450 H6327

• Dc Collector/base Gain Hfe Min: 60
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 24 GHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 10 mA
• Power Dissipation: 450 mW
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-343
• Mounting Type: Surface Mount
• Power - Max: 450mW
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Gain: 15.5dB
• Transistor Type: NPN
• Frequency - Transition: 24GHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 50mA, 4V
• Noise Figure (db Typ @ F): 1.25dB @ 1.8GHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFP450H6327XT

Figure 12
Figure 13
Data Sheet
Maximum Power Gain
Maximum Power Gain
39
36
33
30
27
24
21
18
15
12
39
36
33
30
27
24
21
18
15
12
9
6
3
0
9
6
3
0
0.5
0
20
1
G
G
max
max
40
1.5
=
=
f
f
60
(
(
I
V
C
2
CE
),
),
V
80
CE
I
C
2.5
V
I
20
= 3 V,
= 90 mA,
C
CE
100
[mA]
[V]
3
f
120
= Parameter in GHz
f
= Parameter in GHz
3.5
140
4
160
0.15GHz
0.45GHz
0.90GHz
1.50GHz
1.90GHz
2.40GHz
3.50GHz
5.50GHz
0.15GHz
0.45GHz
0.90GHz
1.50GHz
1.90GHz
2.40GHz
3.50GHz
5.50GHz
4.5
180
Electrical Characteristics
Revision 1.0, 2010-10-22
200
5
BFP450