SGI02N120 Infineon Technologies, SGI02N120 Datasheet - Page 11

• Manufacturer Part Number: SGI02N120
• Description: IGBT NPT 1200V 6.2A 62W TO262-3
• Manufacturer: Infineon Technologies

Specifications of SGI02N120

• Package / Case: TO-262-3 (Straight Leads)
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.6V @ 15V, 2A
• Current - Collector (ic) (max): 6.2A
• Power - Max: 62W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 6.2 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 6.2 A
• Ic(max) @ 100°: 2.8 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SGI02N120XK

Power Semiconductors
Figure A. Definition of switching times
Figure B. Definition of switching losses
SGB02N120, SGD02N120
Preliminary
11
i,v
p(t)
T (t)
j
I
Figure C. Definition of diodes
switching characteristics
Figure D. Thermal equivalent
circuit
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SGP02N120
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Mar-00
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