SGI02N120 Infineon Technologies, SGI02N120 Datasheet - Page 9

• Manufacturer Part Number: SGI02N120
• Description: IGBT NPT 1200V 6.2A 62W TO262-3
• Manufacturer: Infineon Technologies

Specifications of SGI02N120

• Package / Case: TO-262-3 (Straight Leads)
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.6V @ 15V, 2A
• Current - Collector (ic) (max): 6.2A
• Power - Max: 62W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 6.2 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 6.2 A
• Ic(max) @ 100°: 2.8 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SGI02N120XK

Power Semiconductors
TO-263AB (D
TO-220AB
2
Pak)
SGB02N120, SGD02N120
Preliminary
9
symbol
symbol
W
G
M
G
M
Q
A
B
C
D
E
F
H
K
N
P
T
A
B
C
D
E
F
H
K
N
P
R
S
T
U
V
X
Y
Z
L
L
14.88
13.00
9.70
0.65
3.55
2.60
6.00
4.35
0.38
0.95
4.30
1.17
2.30
9.80
0.70
1.00
1.03
0.65
4.30
1.17
9.05
2.30
0.00
4.20
2.40
0.40
min
min
dimensions
SGP02N120
2.54 typ.
2.54 typ.
5.08 typ.
8° max
15 typ.
10.80
16.15
[mm]
[mm]
1.15
6.23
4.60
9.40
10.30
15.95
14.00
10.20
max
0.86
3.89
3.00
6.80
4.75
0.65
1.32
4.50
1.40
2.72
max
1.30
1.60
1.07
0.85
4.50
1.37
9.45
2.50
0.20
5.20
3.00
0.60
dimensions
0.3819
0.5858
0.0256
0.1398
0.1024
0.2362
0.5118
0.1713
0.0150
0.0374
0.1693
0.0461
0.0906
0.3858
0.0276
0.0394
0.0406
0.0256
0.1693
0.0461
0.3563
0.0906
0.0000
0.1654
0.0945
0.0157
min
min
0.5906 typ.
0.1 typ.
0.1 typ.
0.2 typ.
8° max
0.4252
0.0453
0.2453
0.1811
0.3701
0.6358
[inch]
[inch]
0.4055
0.6280
0.0339
0.1531
0.1181
0.2677
0.5512
0.1870
0.0256
0.0520
0.1772
0.0551
0.1071
0.4016
0.0512
0.0630
0.0421
0.0335
0.1772
0.0539
0.3720
0.0984
0.0079
0.2047
0.1181
0.0236
Mar-00
max
max