SGI02N120 Infineon Technologies, SGI02N120 Datasheet - Page 3

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SGI02N120

Manufacturer Part Number
SGI02N120
Description
IGBT NPT 1200V 6.2A 62W TO262-3
Manufacturer
Infineon Technologies
Datasheet

Specifications of SGI02N120

Package / Case
TO-262-3 (Straight Leads)
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.6V @ 15V, 2A
Current - Collector (ic) (max)
6.2A
Power - Max
62W
Input Type
Standard
Mounting Type
Through Hole
Configuration
Single
Collector- Emitter Voltage Vceo Max
1200 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
6.2 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Switching Frequency
Fast IGBT 10-40 kHz
Package
D2PAK (TO-263)
Vce (max)
1,200.0 V
Ic(max) @ 25°
6.2 A
Ic(max) @ 100°
2.8 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SGI02N120XK
Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Power Semiconductors
t
t
t
t
E
E
E
t
t
t
t
E
E
E
Symbol
Symbol
d ( o n )
r
d ( o f f )
f
d ( o n )
r
d ( o f f )
f
o n
o f f
t s
o n
o f f
t s
SGB02N120, SGD02N120
Preliminary
j
j
=25 C
=150 C
T
V
V
R
Energy losses include
“tail” and diode
reverse recovery.
T
V
I
V
R
Energy losses include
“tail” and diode
reverse recovery.
C
j
C C
G E
j
C C
G E
G
G
=2 5 C ,
=1 5 0 C
= 2 A,
= 91 ,
= 91
3
= 80 0 V, I
= 15 V /0 V ,
= 80 0 V,
= 15 V /0 V ,
Conditions
Conditions
C
= 2 A,
min.
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SGP02N120
Value
Value
0.16
0.06
0.22
0.27
0.11
0.38
typ.
typ.
260
290
23
16
61
26
14
85
max.
max.
0.21
0.08
0.29
0.33
0.15
0.48
340
350
102
30
21
80
31
17
Mar-00
Unit
ns
mJ
Unit
ns
mJ

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