SGI02N120 Infineon Technologies, SGI02N120 Datasheet - Page 7

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SGI02N120

Manufacturer Part Number
SGI02N120
Description
IGBT NPT 1200V 6.2A 62W TO262-3
Manufacturer
Infineon Technologies
Datasheet

Specifications of SGI02N120

Package / Case
TO-262-3 (Straight Leads)
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.6V @ 15V, 2A
Current - Collector (ic) (max)
6.2A
Power - Max
62W
Input Type
Standard
Mounting Type
Through Hole
Configuration
Single
Collector- Emitter Voltage Vceo Max
1200 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
6.2 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Switching Frequency
Fast IGBT 10-40 kHz
Package
D2PAK (TO-263)
Vce (max)
1,200.0 V
Ic(max) @ 25°
6.2 A
Ic(max) @ 100°
2.8 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SGI02N120XK
Power Semiconductors
0.4mJ
0.3mJ
0.2mJ
0.1mJ
0.0mJ
2.0mJ
1.5mJ
1.0mJ
0.5mJ
0.0mJ
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T
V
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, V
I
C
GE
= 2A, R
-50°C
= +15V/0V, R
0A
*) E
due to diode recovery.
*) E
due to diode recovery.
T
G
j
I
,
on
on
C
= 9 1 )
JUNCTION TEMPERATURE
,
and E
and E
0°C
COLLECTOR CURRENT
2A
j
CE
G
ts
ts
= 150 C, V
include losses
include losses
= 9 1 )
= 800V, V
50°C
4A
CE
100°C
GE
6A
= 800V,
= +15V/0V,
150°C
SGB02N120, SGD02N120
8A
E
E
E
E
E
on
E
ts
on
off
Preliminary
ts
*
*
off
*
*
7
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = t
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T
V
0.5mJ
0.4mJ
0.3mJ
0.2mJ
0.1mJ
0.0mJ
10
10
10
GE
-1
-2
0
K/W
K/W
K/W
= +15V/0V, I
p
0
1µs
/ T)
0.01
0.05
0.02
0.2
0.1
D=0.5
*) E
due to diode recovery.
on
10µs
and E
single pulse
R
50
G
t
p
,
C
,
j
GATE RESISTOR
= 150 C, V
100µs
ts
PULSE WIDTH
= 2A)
SGP02N120
include losses
100
R
0.66735
0.70472
0.62778
R , ( K / W )
1ms
1
C
1
=
CE
1
/ R
10ms 100ms
= 800V,
1
150
C
0.04691
0.00388
0.00041
2
=
, ( s ) =
2
/R
E
R
2
E
E
Mar-00
off
2
on
ts
*
*
1s

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