SGI02N120 Infineon Technologies, SGI02N120 Datasheet - Page 6

• Manufacturer Part Number: SGI02N120
• Description: IGBT NPT 1200V 6.2A 62W TO262-3
• Manufacturer: Infineon Technologies

Specifications of SGI02N120

• Package / Case: TO-262-3 (Straight Leads)
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.6V @ 15V, 2A
• Current - Collector (ic) (max): 6.2A
• Power - Max: 62W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 6.2 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 6.2 A
• Ic(max) @ 100°: 2.8 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SGI02N120XK

Power Semiconductors
100ns
100ns
Figure 9. Typical switching times as a
function of collector current
(inductive load, T
V
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, V
I
10ns
10ns
C
GE
= 2A, R
-50°C
= +15V/0V, R
0A
t
f
T
t
G
f
j
I
t
t
,
t
r
C
= 9 1 )
d(on)
d(on)
t
JUNCTION TEMPERATURE
,
d(off)
t
0°C
d(off)
2A
COLLECTOR CURRENT
t
j
CE
r
G
= 150 C, V
= 9 1 )
= 800V, V
50°C
4A
CE
GE
100°C
6A
= 800V,
= +15V/0V,
150°C
SGB02N120, SGD02N120
8A
Preliminary
6
100ns
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, T
V
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(I
10ns
GE
C
6V
5V
4V
3V
2V
1V
0V
= 0.3mA)
-50°C
= +15V/0V, I
0
T
j
,
t
JUNCTION TEMPERATURE
r
0°C
t
t
R
d(on)
d(off)
t
50
f
G
,
C
j
GATE RESISTOR
= 150 C, V
= 2A)
SGP02N120
50°C
100
CE
100°C
= 800V,
150
150°C
max.
typ.
min.
Mar-00