HGTP2N120CN Fairchild Semiconductor, HGTP2N120CN Datasheet - Page 2

• Manufacturer Part Number: HGTP2N120CN
• Description: IGBT NPT N-CH 1200V 13A TO-220AB
• Manufacturer: Fairchild Semiconductor

Specifications of HGTP2N120CN

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 2.6A
• Current - Collector (ic) (max): 13A
• Power - Max: 104W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

HGTP2N120CN, HGT1S2N120CN Rev. C
Absolute Maximum Ratings
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at
Notes:
1. Pulse width limited by maximum junction temperature.
2. I
3. V
Electrical Characteristics
BV
I
I
I
V
V
SSOA
P
E
t
T
T
t
BV
BV
I
V
V
I
SSOA
V
Q
C25
C110
CM
J
SC
CES
GES
L
PKG
GES
GEM
D
AV
, T
CE
CE(SAT)
GE(TH)
GEP
Symbol
Symbol
g(ON)
CE(PK)
CES
CES
ECS
= 3A, L = 4mH
STG
= 840V, T
these or any other conditions above those indicated in the operational sections of this specification is not implied.
J
Collector to Emitter Voltage
Collector Current Continuous
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
Switching SOA Operating Area at T
Power Dissipation Total at T
Power Dissipation Derating T
Forward Voltage Avalanche Energy (Note 2)
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering
Short Circuit Withstand Time (Note 3) at V
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
= 125°C, R
At T
At T
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, see Tech Brief 334
C
C
= 25°C
= 110°C
G
= 51Ω.
Parameter
Parameter
T
C
C
= 25°C unless otherwise noted
C
= 25°C
T
> 25°C
C
= 25°C, Unless Otherwise Specified
J
= 150°C (Figure 2)
GE
I
I
V
I
V
I
V
T
L = 5mH, V
I
I
V
C
C
C
C
C
C
CE
GE
GE
J
CE
= 15V
= 250µA, V
= 10mA, V
= 2.6A,
= 45µA, V
= 2.6A, V
= 2.6A,
= 150°C, R
= 1200V
= 600V
= 15V
= ±20V
2
Test Conditions
CE(PK)
CE
CE
GE
GE
G
= 600V
= V
= 51Ω, V
= 0V
= 0V
= 1200V
GE
T
T
T
T
T
V
V
J
J
J
J
J
GE
GE
= 25°C
= 125°C
= 150°C
= 25°C
= 150°C
= 15V
= 20V
HGT1S2N120CN
GE
HGTP2N120CN
= 15V
13A at 1200V
-55 to 150
1200
0.83
±20
±30
104
300
260
13
20
18
7
8
Min. Typ. Max. Units
1200
6.4
15
13
-
-
-
-
-
-
-
-
-
2.05
2.75
10.2
100
6.7
30
36
-
-
-
-
-
-
±250
2.40
3.50
100
1.0
36
43
www.fairchildsemi.com
-
-
-
-
-
-
Units
W/°C
mJ
°C
°C
°C
µs
W
V
A
A
V
A
V
mA
µA
µA
nA
nC
nC
V
V
V
V
V
A
V