HGTP2N120CN Fairchild Semiconductor, HGTP2N120CN Datasheet - Page 4

• Manufacturer Part Number: HGTP2N120CN
• Description: IGBT NPT N-CH 1200V 13A TO-220AB
• Manufacturer: Fairchild Semiconductor

Specifications of HGTP2N120CN

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 2.6A
• Current - Collector (ic) (max): 13A
• Power - Max: 104W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

HGTP2N120CN, HGT1S2N120CN Rev. C
Typical Performance Characteristics
Figure 1. DC Collector Current vs
Figure 3. Operating Frequency vs Collector to
Figure 5. Collector to Emitter On-State Voltage
200
100
50
10
14
12
10
10
8
6
4
2
0
1
8
6
4
2
0
25
0
P
f
f
R
MAX1
MAX2
C
T
T
ØJC
Case Temperature
Emitter Currentl
C
= CONDUCTION DISSIPATION
J
= 150
= 75
(DUTY FACTOR = 50%)
= 1.2
= 0.05 / (t
= (P
I
CE
V
IDEAL DIODE
o
T
CE
, COLLECTOR TO EMITTER CURRENT (A)
1
o
C,V
D
C
50
o
C, R
, COLLECTOR TO EMITTER VOLTAGE (V)
- P
C/W, SEE NOTES
= -55
GE
T
C
d(OFF)I
C
G
) / (E
, CASE TEMPERATURE (
= 15V
o
= 51Ω, V
C
2
ON2
+ t
75
2
d(ON)I
+ E
GE
DUTY CYCLE <0.5%, V
250µS PULSE TEST
OFF
= 15V, L = 5mH
)
3
)
100
T
T
C
C
110
110
= 25
= 150
T
C
3
4
o
o
C
C
o
o
C)
C
o
C
V
V
15V
12V
125
GE
GE
75
75
= 15V
T
GE
5
o
o
C
4
C 15V
C 12V
= 12V
V
GE
150
5
6
4
Figure 2. Minimum Switching Safe Operating
Figure 4. Short Circuit Withstand Time
Figure 6. Collector to Emitter On-State Voltage
10
16
14
12
10
8
6
4
2
0
8
6
4
2
0
0
50
40
30
20
10
0
DUTY CYCLE <0.5%, V
250µs PULSE TEST
0
10
T
Area
J
= 150
V
V
200
I
V
CE
SC
CE
CE
V
GE
= 840V, R
1
, COLLECTOR TO EMITTER VOLTAGE (V)
o
, COLLECTOR TO EMITTER VOLTAGE (V)
11
C, R
, GATE TO EMITTER VOLTAGE (V)
400
T
G
C
= 51Ω, V
= -55
G
= 51Ω, T
GE
12
2
600
o
= 15V
C
GE
= 15V, L = 5mH
J
= 125
13
800
3
o
C
T
C
1000
= 25
14
o
www.fairchildsemi.com
C
4
T
t
C
1200
SC
= 150
15
50
40
30
20
10
0
o
C
1400
5