HGTP2N120CN Fairchild Semiconductor, HGTP2N120CN Datasheet - Page 6

• Manufacturer Part Number: HGTP2N120CN
• Description: IGBT NPT N-CH 1200V 13A TO-220AB
• Manufacturer: Fairchild Semiconductor

Specifications of HGTP2N120CN

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 2.6A
• Current - Collector (ic) (max): 13A
• Power - Max: 104W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

HGTP2N120CN, HGT1S2N120CN Rev. C
Typical Performance Characteristics
Figure 13. Transfer Characteristic
Figure 15. Capacitance vs Collector to Emitter
2.0
1.5
1.0
0.5
40
35
30
25
20
15
10
5
0
0
0
7
10
10
10
FREQUENCY = 1MHz
C
-1
-2
DUTY CYCLE <0.5%, V
250µS PULSE TEST
0
10
T
RES
C
C
-5
C
0.02
= 25
0.01
0.05
OES
0.1
IES
0.5
0.2
8
V
CE
o
V
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 17. Normalized Transient Thermal Response, Junction to Case
C
5
GE
9
, GATE TO EMITTER VOLTAGE (V)
T
C
SINGLE PULSE
= -55
10
10
o
T
C
CE
C
= 150
= 20V
11
10
-4
o
C
15
12
13
20
t
1
, RECTANGULAR PULSE DURATION (s)
14
10
-3
25
15
(Continued)
6
Figure 14. Gate Charage Waveforms
Figure 16. Collector to Emitter On-Sate Voltage
14
12
10
16
8
6
4
2
0
5
4
3
2
1
0
0
0
10
DUTY FACTOR, D = t
PEAK T
I
G(REF)
-2
DUTY CYCLE <0.5%, T
250µs PULSE TEST
P
D
0.5
V
5
= 1mA, R
CE
J
= (P
, COLLECTOR TO EMITTER VOLTAGE (V)
V
CE
D
1.0
X Z
= 400V V
Q
L
10
V
G
t
1
= 260Ω, T
CE
, GATE CHARGE (nC)
θJC
t
2
1
= 1200V
X R
/ t
1.5
2
C
CE
θJC
10
15
= 110
C
-1
= 800V
) + T
= 25
2.0
o
C
C
o
C
V
20
GE
2.5
= 15V
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V
25
GE
3.0
= 10V
10
0
3.5
30