HGTP2N120CN Fairchild Semiconductor, HGTP2N120CN Datasheet - Page 8

• Manufacturer Part Number: HGTP2N120CN
• Description: IGBT NPT N-CH 1200V 13A TO-220AB
• Manufacturer: Fairchild Semiconductor

Specifications of HGTP2N120CN

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 2.6A
• Current - Collector (ic) (max): 13A
• Power - Max: 104W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

HGTP2N120CN, HGT1S2N120CN Rev. C
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gate-insu-
lation damage by the electrostatic discharge of energy through
the devices. When handling these devices, care should be exer-
cised to assure that the static charge built in the handler’s body
capacitance is not discharged through the device. With proper
handling and application procedures, however, IGBTs are cur-
rently being extensively used in production by numerous equip-
ment manufacturers in military, industrial and consumer
applications, with virtually no damage problems due to electro-
static discharge. IGBTs can be handled safely if the following
basic precautions are taken:
1. Prior to assembly into a circuit, all leads should be kept
2. When devices are removed by hand from their carriers, the
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from cir-
5. Gate Voltage Rating - Never exceed the gate-voltage rating
6. Gate Termination - The gates of these devices are essen-
7. Gate Protection - These devices do not have an internal
shorted together either by the use of metal shorting springs
or by the insertion into conductive material such as
“ECCOSORBD™ LD26” or equivalent.
hand being used should be grounded by any suitable means
- for example, with a metallic wristband.
cuits with power on.
of V
damage to the oxide layer in the gate region.
tially capacitors. Circuits that leave the gate open-circuited or
floating should be avoided. These conditions can result in
turn-on of the device due to voltage buildup on the input
capacitor due to leakage currents or pickup.
monolithic Zener diode from gate to emitter. If gate protection
is required, an external Zener is recommended.
GEM
. Exceeding the rated V
GE
can result in permanent
8
Operating Frequency Information
Operating frequency information for a typical device (Figure 3)
is presented as a guide for estimating device performance for a
specific application. Other typical frequency vs collector current
(I
unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot
(Figure 3) of a typical device shows f
smaller at each point. The information is based on measure-
ments of a typical device and is bounded by the maximum rated
junction temperature.
f
(the denominator) has been arbitrarily held to 10% of the on-
state time for a 50% duty factor. Other definitions are possible.
t
delay can establish an additional frequency limiting condition for
an application other than T
ling output ripple under a lightly loaded condition.
f
dissipation (P
device switching and conduction losses must not exceed P
A 50% duty factor was used (Figure 3) and the conduction
losses (P
E
in Figure 19. E
loss (I
instantaneous power loss (I
losses are included in the calculation for E
tor current equals zero (I
MAX1
d(OFF)I
MAX2
CE
ON2
) plots are possible using the information shown for a typical
is defined by f
and E
CE
is defined by f
and t
C
x V
) are approximated by P
OFF
CE
D
d(ON)I
) is defined by P
ON2
) during turn-on and E
are defined in the switching waveforms shown
MAX2
are defined in Figure 19. Device turn-off
is the integral of the instantaneous power
MAX1
= (P
CE
JM
= 0.05/(t
D
= 0).
. t
CE
- P
d(OFF)I
D
x V
C
= (T
)/(E
C
CE
MAX1
d(OFF)I
JM
OFF
= (V
is important when control-
OFF
) during turn-off. All tail
- T
+ E
CE
or f
C
+ t
is the integral of the
OFF
)/Rθ
ON2
x I
MAX2
d(ON)I
; i.e., the collec-
CE
JC
). The allowable
www.fairchildsemi.com
. The sum of
; whichever is
)/2.
). Deadtime
D
.