HGTP2N120CN Fairchild Semiconductor, HGTP2N120CN Datasheet - Page 5

• Manufacturer Part Number: HGTP2N120CN
• Description: IGBT NPT N-CH 1200V 13A TO-220AB
• Manufacturer: Fairchild Semiconductor

Specifications of HGTP2N120CN

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 2.6A
• Current - Collector (ic) (max): 13A
• Power - Max: 104W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

HGTP2N120CN, HGT1S2N120CN Rev. C
Typical Performance Characteristics
Figure 7. Turn-On Energy Loss vs Collector to
Figure 9. Turn_On Delay Time vs Collector to
Figure 11. Turn-Off Delay Time vs Collector to
2000
1500
1000
45
40
35
30
25
20
15
400
350
300
250
200
150
100
500
1.0
0
1.0
1.0
R
T
R
V
R
Emitter Current
Emitter Current
J
G
G
GE
G
= 150
= 51Ω, L = 5mH, V
1.5
Emitter Current
= 51Ω, L = 5mH, V
= 51Ω, L = 5mH, V
1.5
1.5
I
= 12V, V
I
I
CE
CE
CE
, COLLECTOR TO EMITTER CURRENT (A)
o
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
C, V
2.0
2.0
2.0
T
GE
GE
J
= 25
V
= 15V, T
= 12V, V
GE
2.5
2.5
2.5
o
= 12V, V
C, T
CE
CE
CE
T
T
J
= 960V
J
J
= 960V
GE
J
= 960V
= 25
= 25
= 150
= 25
3.0
3.0
3.0
= 15V
GE
o
o
o
C, V
C
o
= 15V, T
C, T
C, V
3.5
3.5
3.5
GE
J
GE
= 150
= 12V, V
= 12V
J
= 150
4.0
4.0
4.0
o
C, V
o
GE
C
GE
4.5
4.5
= 15V
4.5
= 15V
5.0
5.0
5.0
(Continued)
5
Figure 8. Turn-Off Energy Loss vs Collector to
Figure 10. Turn-On Rise Time vs Collector to
Figure 12. Fall Time vs Collector to Emitter
40
35
30
25
20
15
10
700
600
500
400
300
200
100
5
0
900
800
700
600
500
400
300
200
100
1.0
1.0
1.0
R
T
G
J
R
Emitter Current
T
1.5
= 51Ω, L = 5mH, V
= 25
1.5
G
J
Current
I
Emitter Current
I
CE
CE
= 150
1.5
= 51Ω, L = 5mH, V
I
CE
o
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
C, T
, COLLECTOR TO EMITTER CURRENT (A)
2.0
o
2.0
C, V
J
T
2.0
T
= 150
J
J
T
= 150
GE
= 25
J
2.5
= 25
2.5
= 12V OR 15V
o
C, V
2.5
o
CE
o
C, T
C, V
o
C, V
CE
= 960V
R
GE
J
3.0
G
3.0
GE
= 960V
= 150
= 12V
GE
T
3.0
= 51Ω, L = 5mH, V
J
= 12V OR 15V
= 25
= 12V OR 15V
o
3.5
C, V
3.5
o
3.5
C, V
GE
GE
= 15V
4.0
4.0
4.0
= 12V OR 15V
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CE
4.5
= 960V
4.5
4.5
5.0
5.0
5.0