SI3911DV-T1-E3 Vishay, SI3911DV-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI3911DV-T1-E3
• Description: MOSFET P-CH DUAL 20V 1.8A 6TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3911DV-T1-E3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 145 mOhm @ 2.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 450mV @ 250µA
• Gate Charge (qg) @ Vgs: 7.5nC @ 4.5V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -2.2A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 300mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -450mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI3911DV-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71380
S09-2276-Rev. C, 02-Nov-09
0.75
0.60
0.45
0.30
0.15
0.00
0.1
10
1
5
4
3
2
1
0
0.00
0
0
V
GS
= 1.8 V
V
I
Source-Drain Diode Forward Voltage
D
DS
On-Resistance vs. Drain Current
= 2.2 A
T
0.3
V
= 10 V
1
J
SD
= 150 °C
2
- Source-to-Drain Voltage (V)
Q
I
D
g
V
- Total Gate Charge (nC)
GS
- Drain Current (A)
Gate Charge
0.6
2
= 2.5 V
4
T
J
0.9
3
= 25 °C
V
GS
6
1.2
= 4.5 V
4
1.5
8
5
600
500
400
300
200
100
0.5
0.4
0.3
0.2
0.1
0.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
C
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
rss
- 25
V
I
D
GS
= 2.2 A
V
V
4
= 4.5 V
1
DS
GS
0
T
C
J
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
oss
- Junction Temperature (°C)
Capacitance
25
2
8
C
I
50
iss
D
Vishay Siliconix
= 2.2 A
12
3
75
Si3911DV
www.vishay.com
100
16
4
125
150
20
5
3