SI3911DV-T1-E3 Vishay, SI3911DV-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI3911DV-T1-E3
• Description: MOSFET P-CH DUAL 20V 1.8A 6TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3911DV-T1-E3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 145 mOhm @ 2.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 450mV @ 250µA
• Gate Charge (qg) @ Vgs: 7.5nC @ 4.5V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -2.2A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 300mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -450mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI3911DV-T1-E3TR

Si3911DV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71380.
www.vishay.com
4
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
- 50
0.01
0.01
0.1
0.1
2
1
2
1
10
10
- 25
-4
-4
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0
I
D
Threshold Voltage
= 250 µA
T
Single Pulse
J
25
- Temperature (°C)
10
-3
Single Pulse
50
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
Normalized Thermal Transient Impedance, Junction-to-Foot
100
10
-2
125
Square Wave Pulse Duration (s)
150
Square Wave Pulse Duration (s)
10
-2
10
-1
8
6
4
2
0
10
0.01
1
-1
Single Pulse Power (Junction-to-Ambient)
0.1
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
Notes:
P
DM
JM
- T
Time (s)
A
t
1
1
= P
S09-2276-Rev. C, 02-Nov-09
t
2
DM
Document Number: 71380
1
Z
thJA
thJA
100
(t)
t
t
1
2
= 130 °C/W
10
600
10
30