SI3911DV-T1-E3 Vishay, SI3911DV-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI3911DV-T1-E3
• Description: MOSFET P-CH DUAL 20V 1.8A 6TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3911DV-T1-E3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 145 mOhm @ 2.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 450mV @ 250µA
• Gate Charge (qg) @ Vgs: 7.5nC @ 4.5V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -2.2A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 300mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -450mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI3911DV-T1-E3TR

Document Number: 71200
18-Dec-06
TSOP: 5/6−LEAD
JEDEC Part Number: MO-193C
0.08
C
5
1
5-LEAD TSOP
e
e1
2
D
b
ECN: C-06593-Rev. I, 18-Dec-06
DWG: 5540
Dim
A
A
E
e
L
L
4
3
A
b
D
E
L
R
c
e
1
1
1
2
1
1
2
- C -
Min
0.15 M
0.91
0.01
0.90
0.30
0.10
2.95
2.70
1.55
1.80
0.32
0.10
0
- A -
MILLIMETERS
E
A
A
1
2
1
- B -
C
A
0.95 BSC
0.25 BSC
0.60 Ref
7 Nom
B A
Nom
E
Seating Plane
0.32
0.15
3.05
2.85
1.65
1.90
4
-
-
-
-
-
Max
1.10
0.10
1.00
0.45
0.20
3.10
2.98
1.70
2.00
0.50
8
-
R
R
0.0004
0.036
0.035
0.012
0.004
0.106
0.061
0.071
0.012
0.004
0.116
Min
0
6
1
INCHES
4x 1
4x 1
0.0374 BSC
0.010 BSC
0.024 Ref
7 Nom
6-LEAD TSOP
Nom
e
0.038
0.013
0.006
0.120
0.065
0.075
0.112
4
-
-
-
-
e1
5
2
Max
0.043
0.004
0.039
0.018
0.008
0.122
0.117
0.067
0.079
0.020
Package Information
8
-
b
(L
1
)
4
3
0.17 Ref
0.15 M
c
E
Vishay Siliconix
1
L
- B -
L
2
C
Gauge Plane
Seating Plane
B A
E
www.vishay.com
1