SI3911DV-T1-E3 Vishay, SI3911DV-T1-E3 Datasheet - Page 8

• Manufacturer Part Number: SI3911DV-T1-E3
• Description: MOSFET P-CH DUAL 20V 1.8A 6TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3911DV-T1-E3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 145 mOhm @ 2.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 450mV @ 250µA
• Gate Charge (qg) @ Vgs: 7.5nC @ 4.5V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -2.2A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 300mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -450mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI3911DV-T1-E3TR

Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR TSOP-6
0.099
(2.510)
0.039
0.020
0.019
(1.001)
(0.508)
(0.493)
Recommended Minimum Pads
Dimensions in Inches/(mm)
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Document Number: 72610
26
Revision: 21-Jan-08