SI3911DV-T1-E3 Vishay, SI3911DV-T1-E3 Datasheet - Page 7

• Manufacturer Part Number: SI3911DV-T1-E3
• Description: MOSFET P-CH DUAL 20V 1.8A 6TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3911DV-T1-E3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 145 mOhm @ 2.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 450mV @ 250µA
• Gate Charge (qg) @ Vgs: 7.5nC @ 4.5V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -2.2A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 300mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -450mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI3911DV-T1-E3TR

AN823
Vishay Siliconix
THERMAL PERFORMANCE
A basic measure of a device’s thermal performance is the
junction-to-case
junction-to-foot thermal resistance, Rq
measured for the device mounted to an infinite heat sink and
is therefore a characterization of the device only, in other
words, independent of the properties of the object to which the
device is mounted.
of the TSOP-6.
SYSTEM AND ELECTRICAL IMPACT OF
TSOP-6
In any design, one must take into account the change in
MOSFET r
www.vishay.com
2
Equivalent Steady State Performance—TSOP-6
DS(on)
Thermal Resistance Rq
with temperature (Figure 4).
thermal
3_C/s (max)
Table 1 shows the thermal performance
140 − 170_C
TABLE 1.
resistance,
jf
FIGURE 3. Solder Reflow Temperature and Time Durations
jf
. This parameter is
Maximum peak temperature at 240_C is allowed.
Rq
jc
,
30_C/W
Pre-Heating Zone
60-120 s (min)
or
the
1X4_C/s (max)
255 − 260_C
1.6
1.4
1.2
1.0
0.8
0.6
−50
On-Resistance vs. Junction Temperature
V
I
−25
D
Reflow Zone
GS
60 s (max)
= 6.1 A
10 s (max)
217_C
= 4.5 V
T
FIGURE 4. Si3434DV
0
J
− Junction Temperature (_C)
25
50
3-6_C/s (max)
75
Document Number: 71743
100
125
150
27-Feb-04