PHC21025,118 NXP Semiconductors, PHC21025,118 Datasheet - Page 10

• Manufacturer Part Number: PHC21025,118
• Description: MOSFET N/P-CH 30V SOT96-1
• Manufacturer: NXP Semiconductors

Specifications of PHC21025,118

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.5A, 2.3A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 250pF @ 20V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.5 A, - 2.3 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934034320118; PHC21025 /T3; PHC21025 /T3

NXP Semiconductors
PHC21025
Product data sheet
Fig 13. Source current as a function of source-drain
Fig 15. Drain-source on-state resistance as a function
R
(mΩ)
DSon
(A)
10
10
10
I
S
10
6
4
2
0
4
3
2
voltage; N-channel; typical values
of drain current; N-channel; typical values
V
(1) T
(2) T
(3) T
V
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
0
0
GD
DS
D
D
D
D
D
D
≥ I
= 0.
j
j
j
= 150 °C.
= 25 °C.
= -55 °C.
= 0.1 A.
= 0.5 A.
= 1 A.
= 2.2 A.
= 3.5 A.
= 7 A.
D
2
x R
(1)(2)
DSon
(3)(4)(5)
0.5
; T
4
(6)
(1)
j
= 25 °C.
(2)
6
1
(3)
V
SD
All information provided in this document is subject to legal disclaimers.
8
V
(V)
GS
mda217
mbe159
(V)
1.5
10
Rev. 04 — 17 March 2011
Fig 14. Source current as a function of source-drain
Fig 16. Drain-source on-state resistance as a function
R
(mΩ)
DSon
(A)
10
10
10
I
S
−6
−4
−2
0
4
3
2
voltage; P-channel; typical values
of drain current; typical values
V
(1) T
(2) T
(3) T
-V
(1) I
(2) I
(3) I
(4) I
(5) I
0
0
GD
DS
D
D
D
D
D
= 0.
j
j
j
≥ -I
= -4.5 A.
Complementary intermediate level FET
= 150 °C.
= 25 °C.
= -55 °C.
= -0.1 A.
= -0.5 A.
= -1 A.
= -2.3 A.
−2
D
(1)
−0.5
x R
(2)(3)
DSon
(4) (5)
−4
; T
−1
j
= 25 °C.
(1)
−6
PHC21025
(2)
−1.5
© NXP B.V. 2011. All rights reserved.
−8
(3)
V
V
SD
GS
mbe158
mda165
(V)
(V)
−10
−2
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