PHC21025,118 NXP Semiconductors, PHC21025,118 Datasheet - Page 3

• Manufacturer Part Number: PHC21025,118
• Description: MOSFET N/P-CH 30V SOT96-1
• Manufacturer: NXP Semiconductors

Specifications of PHC21025,118

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.5A, 2.3A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 250pF @ 20V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.5 A, - 2.3 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934034320118; PHC21025 /T3; PHC21025 /T3

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
[5]
[6]
PHC21025
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
D
DM
S
SM
stg
j
DS
GS
GSO
tot
Pulse width and duty cycle limited by maximum junction temperature.
Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with a thermal resistance from ambient to
solder point of 90 K/W.
Maximum permissible dissipation per MOS transistor. Both devices may be loaded up to 2 W at the same time.
Maximum permissible dissipation if only one MOS transistor dissipates. Device mounted on printed-circuit board with thermal resistance
from ambient to solder point of 90 K/W.
Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with a Thermal resistance from ambient
to solder point of 27.5 K/W.
Pulse width and duty cycle limited by maximum junction temperature.
Limiting values
Parameter
drain-source voltage
gate-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
All information provided in this document is subject to legal disclaimers.
open drain
Conditions
T
T
T
T
T
see
T
see
T
T
T
T
T
T
T
Rev. 04 — 17 March 2011
j
j
sp
sp
sp
sp
amb
sp
amb
sp
sp
sp
sp
≥ 25 °C; T
≥ 25 °C; T
≤ 80 °C; P-channel
≤ 80 °C; N-channel
= 25 °C; pulsed; N-channel;
= 25 °C; pulsed; P-channel;
= 80 °C; see
≤ 80 °C; P-channel
≤ 80 °C; N-channel
= 25 °C; pulsed; P-channel
= 25 °C; pulsed; N-channel
Figure 2
Figure 3
= 25 °C
= 25 °C
j
j
≤ 150 °C; N-channel
≤ 150 °C; P-channel
Figure 1
Complementary intermediate level FET
[1]
[1]
[2]
[3]
[4]
[5]
[6]
[6]
PHC21025
Min
-
-
-
-20
-
-
-
-
-
-
-
-
-65
-
-
-
-
-
© NXP B.V. 2011. All rights reserved.
20
150
Max
30
-30
-
-2.3
3.5
14
-10
1
2
1.3
2
150
-1.25
1.5
-5
6
Unit
V
V
V
V
A
A
A
A
W
W
W
W
°C
°C
A
A
A
A
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