PHC21025,118 NXP Semiconductors, PHC21025,118 Datasheet - Page 6

• Manufacturer Part Number: PHC21025,118
• Description: MOSFET N/P-CH 30V SOT96-1
• Manufacturer: NXP Semiconductors

Specifications of PHC21025,118

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.5A, 2.3A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 250pF @ 20V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.5 A, - 2.3 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934034320118; PHC21025 /T3; PHC21025 /T3

NXP Semiconductors
6. Characteristics
Table 6.
PHC21025
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
I
Dynamic characteristics
Q
DSS
GSS
DSon
(BR)DSS
GS(th)
DSon
G(tot)
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
on-state drain current
total gate charge
All information provided in this document is subject to legal disclaimers.
Conditions
I
P-channel
I
N-channel
I
P-channel; see
I
N-channel; see
V
P-channel
V
N-channel
V
N-channel
V
P-channel
V
P-channel
V
N-channel
V
P-channel; see
see
V
N-channel; see
see
V
P-channel; see
see
V
see
V
V
V
V
I
T
see
I
V
see
Rev. 04 — 17 March 2011
D
D
D
D
D
D
j
DS
DS
GS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
GS
= -10 µA; V
= 10 µA; V
= -1 mA; V
= 1 mA; V
= 2.3 A; V
= 25 °C; N-channel;
= -2.3 A; V
Figure 19
Figure 18
Figure 19
Figure
Figure 11
Figure 12
= -24 V; V
= 24 V; V
= 5 V; V
= -5 V; V
= -1 V; V
= 1 V; V
= 20 V; V
= 20 V; V
= -20 V; V
= -20 V; V
= -10 V; I
= 10 V; I
= -4.5 V; I
= 4.5 V; I
= -10 V; T
15; see
DS
GS
GS
DS
D
GS
DS
DS
GS
GS
D
D
GS
DS
DS
GS
D
GS
j
DS
DS
= 2.2 A; T
= V
= 1 A; N-channel;
= 15 V; V
= -1 A; T
= 4.5 V; N-channel
= 10 V; N-channel
= 25 °C; P-channel;
Figure 17
Figure
Figure
Figure 17
Figure
= -0.5 A; T
= 0 V; T
= V
= -15 V;
= -4.5 V; P-channel
= -10 V; P-channel
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
GS
Figure 18
GS
; T
; T
16;
16;
15;
j
j
j
j
j
j
j
GS
j
j
= 25 °C;
= 25 °C;
= 25 °C;
j
j
j
= 25 °C;
= 25 °C;
= 25 °C;
= 25 °C;
= 25 °C;
= 25 °C;
j
= 25 °C;
= 25 °C;
= 25 °C;
= 25 °C;
= 10 V;
Complementary intermediate level FET
Min
-30
30
-1
1
-
-
-
-
-
-
-
-
-
-
2
-1
-2.3
3.5
-
-
PHC21025
Typ
-
-
-
-
-
-
-
-
-
-
0.22
0.08
0.33
0.11
-
-
-
-
10
10
© NXP B.V. 2011. All rights reserved.
Max
-
-
-2.8
2.8
-100
100
100
100
100
100
0.25
0.1
0.4
0.2
-
-
-
-
30
25
Unit
V
V
V
V
nA
nA
nA
nA
nA
nA
Ω
Ω
Ω
Ω
A
A
A
A
nC
nC
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