PHC21025,118 NXP Semiconductors, PHC21025,118 Datasheet - Page 8

• Manufacturer Part Number: PHC21025,118
• Description: MOSFET N/P-CH 30V SOT96-1
• Manufacturer: NXP Semiconductors

Specifications of PHC21025,118

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.5A, 2.3A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 250pF @ 20V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.5 A, - 2.3 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934034320118; PHC21025 /T3; PHC21025 /T3

NXP Semiconductors
PHC21025
Product data sheet
Fig 5.
Fig 7.
(pF)
600
400
200
C
(A)
I
16
12
D
0
8
4
0
voltage; N-channel; typical values
function of drain-source voltage; N-channel;
typical values
Capacitance as a function of drain-source
Output characteristics: drain current as a
0
0
V
10 V
GS
2
=
6 V
5 V
4.5 V
4 V
3.5 V
3 V
10
4
6
C
C
C
oss
rss
iss
20
8
V
All information provided in this document is subject to legal disclaimers.
DS
10
V
(V)
mbe137
mbe142
DS
(V)
30
12
Rev. 04 — 17 March 2011
Fig 6.
Fig 8.
(pF)
600
C
400
200
−10
(A)
I
−8
−6
−4
−2
D
0
0
voltage; P-channel; typical values
function of drain-source voltage; P-channel;
typical values
Capacitance as a function of drain-source
Output characteristics: drain current as a
0
0
V
−10 V
GS
Complementary intermediate level FET
−2
=
−7.5 V
−10
−4
−6
−20
−8
PHC21025
C
C
C
oss
iss
rss
V
© NXP B.V. 2011. All rights reserved.
DS
−10
−2.5 V
V
−3.5 V
(V)
−6 V
−4.5 V
−3 V
−5 V
−4 V
mbe154
mbe144
DS
(V)
−30
−12
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