PHC21025,118 NXP Semiconductors, PHC21025,118 Datasheet - Page 9

• Manufacturer Part Number: PHC21025,118
• Description: MOSFET N/P-CH 30V SOT96-1
• Manufacturer: NXP Semiconductors

Specifications of PHC21025,118

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.5A, 2.3A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 250pF @ 20V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.5 A, - 2.3 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934034320118; PHC21025 /T3; PHC21025 /T3

NXP Semiconductors
PHC21025
Product data sheet
Fig 9.
Fig 11. Gate-source voltage as a function of gate
V
(V)
(A)
I
GS
D
16
12
10
8
4
0
8
6
4
2
0
function of gate-source voltage; N-channel;
typical values
charge; N-channel; typical values
Transfer characteristics: drain current as a
0
0
2
2
4
4
6
6
All information provided in this document is subject to legal disclaimers.
Q
V
G
GS
mbe141
mbe136
(nC)
(V)
Rev. 04 — 17 March 2011
8
8
Fig 10. Transfer characteristics: drain current as a
Fig 12. Gate-source voltage as a function of gate
V
(V)
(A)
I
GS
−10
−10
D
−8
−6
−4
−2
−8
−6
−4
−2
0
0
function of gate-source voltage; P-channel;
typical values
charge; P-channel; typical values
0
0
Complementary intermediate level FET
−2
−2
−4
−4
−6
PHC21025
−6
© NXP B.V. 2011. All rights reserved.
−8
V
Q
GS
g
mbe157
mbe145
(nC)
(V)
−10
−8
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