FDS9934C Fairchild Semiconductor, FDS9934C Datasheet

MOSFET N/P-CH DUAL 20V 8SOIC

FDS9934C

Manufacturer Part Number
FDS9934C
Description
MOSFET N/P-CH DUAL 20V 8SOIC
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDS9934C

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
30 mOhm @ 6.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
6.5A, 5A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
9nC @ 4.5V
Input Capacitance (ciss) @ Vds
650pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.03 Ohm @ 4.5 V @ N Channel
Forward Transconductance Gfs (max / Min)
22 S, 14 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 10 V @ N Channel or +/- 12 V @ P Channel
Continuous Drain Current
6.5 A @ N Channel or 5 A @ P Channel
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Fall Time
4 ns, 9 ns
Rise Time
9 ns, 9 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDS9934C
Manufacturer:
FSC
Quantity:
42 500
Part Number:
FDS9934C
Manufacturer:
FAIRCHILD
Quantity:
50 000
Part Number:
FDS9934C
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS9934C
Quantity:
5 000
Part Number:
FDS9934C-NL
Manufacturer:
FSC
Quantity:
37 500
Part Number:
FDS9934C-NL
Manufacturer:
FAIRCHILD
Quantity:
12 648
Part Number:
FDS9934C-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDS9934C
Complementary
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
2006 Fairchild Semiconductor Corporation
P
Thermal Characteristics
R
R
Absolute Maximum Ratings
Symbol
V
V
I
T
Package Marking and Ordering Information
Device Marking
D
D
J
DSS
GSS
, T
JA
JC
FDS9934C
STG
Semiconductor’s
SO-8
D
D1
Pin 1
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D1
SO-8
D
FDS9934C
advanced
D2
Device
D
D2
S1
S
G1
– Continuous
– Pulsed
PowerTrench
S
S2
Parameter
S
G2
G
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
Features
Q1: 6.5 A, 20 V. R
Q2: –5 A, –20 V, R
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1c)
(Note 1)
5
6
7
8
Q1
Q2
Q1
6.5
20
20
R
R
10
Tape width
DS(ON)
DS(ON)
DS(ON)
DS(ON)
Ratings
–55 to +150
12mm
1.6
0.9
78
40
2
1
= 30 m
= 43 m
= 55 m
= 90 m
–20
±12
–30
Q2
–5
March 2006
4
3
2
1
@ V
@ V
@ V
@ V
GS
GS
GS
GS
2500 units
FDS9934C Rev D(W)
Quantity
= 4.5 V
= 2.5 V.
= –4.5 V
= –2.5 V
Units
C/W
C/W
W
V
V
A
C

Related parts for FDS9934C

FDS9934C Summary of contents

Page 1

... Reel Size 13’’ March 2006 = 4.5 V DS(ON 2.5 V. DS(ON –4.5 V DS(ON –2.5 V DS(ON Ratings Units –20 V ± 6.5 – – 1.6 1 0.9 –55 to +150 C 78 C/W 40 C/W Tape width Quantity 12mm 2500 units FDS9934C Rev D(W) ...

Page 2

... –4 – – 6 – 5 10V 1.0 MHz – 1.0 MHz mV 1.0 MHz GS Typ Max Units – mV – –1 Q1 ±100 nA Q2 ±100 Q1 0 –0.6 –0.9 –1.2 Q1 –3 mV – 650 pF Q2 955 Q1 150 pF Q2 215 115 Q1 1.4 Q2 4.9 FDS9934C Rev D(W) ...

Page 3

... A/µ -3 100 A/µ determined by the user's board design 125°C/W when 2 mounted on a .02 in pad copper Type Min Typ Max Units 2 2 –1.3 Q1 0.73 1 –0.8 –1 135°C/W when mounted on a minimum pad. FDS9934C Rev D(W) ...

Page 4

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 2.5V 3.0V 3.5V 4.0V 4. DIRAIN CURRENT ( 3.25A 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS9934C Rev D( 1.2 ...

Page 5

... C rss Figure 8. Capacitance Characteristics. 50 100 s 40 1ms 10ms 100 0 0.001 Figure 10. Single Pulse Maximum MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 135°C 25°C A 0.01 0 TIME (sec) 1 Power Dissipation. FDS9934C Rev D(W) 20 100 ...

Page 6

... T 0.1 0.01 0.001 0.0001 Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. =-2.5V -3.0V -3.5V -4.0V -4. DRAIN CURRENT ( -2. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage. = 125 -55 C 0.4 0.8 1 BODY DIODE FORWARD VOLTAGE (V) SD FDS9934C Rev D( 1.6 ...

Page 7

... Figure 20. Single Pulse Maximum 0.01 0 TIME (sec MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 135°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( 135 C/W JA P(pk ( Duty Cycle 100 1000 FDS9934C Rev D(W) 20 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. FAST ® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...

Related keywords