FDS9934C Fairchild Semiconductor, FDS9934C Datasheet - Page 5

• Manufacturer Part Number: FDS9934C
• Description: MOSFET N/P-CH DUAL 20V 8SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of FDS9934C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 6.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6.5A, 5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 650pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.03 Ohm @ 4.5 V @ N Channel
• Forward Transconductance Gfs (max / Min): 22 S, 14 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 10 V @ N Channel or +/- 12 V @ P Channel
• Continuous Drain Current: 6.5 A @ N Channel or 5 A @ P Channel
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Fall Time: 4 ns, 9 ns
• Rise Time: 9 ns, 9 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics: Q1 (N-Channel)
0.01
100
0.1
10
Figure 9. Maximum Safe Operating Area.
5
4
3
2
1
0
1
Figure 7. Gate Charge Characteristics.
0.01
0
SINGLE PULSE
R
I
D
V
JA
= 3 A
T
GS
A
R
= 135
= 25
1
DS(ON)
= 4.5V
o
o
C/W
C
LIMIT
0.1
V
2
DS
, DRAIN-SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
3
DC
1
4
10s
V
DS
1s
= 5V
100ms
5
10ms
1ms
10
6
10V
100 s
7
15V
100
8
1000
800
600
400
200
50
40
30
20
10
0
0.001
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
C
rss
0.01
V
Power Dissipation.
DS
5
, DRAIN TO SOURCE VOLTAGE (V)
C
oss
0.1
t
1
, TIME (sec)
10
1
C
iss
SINGLE PULSE
R
15
JA
T
FDS9934C Rev D(W)
A
10
= 135°C/W
= 25°C
f = 1 MHz
V
GS
= 0 V
100
20