FDS9934C Fairchild Semiconductor, FDS9934C Datasheet - Page 3

• Manufacturer Part Number: FDS9934C
• Description: MOSFET N/P-CH DUAL 20V 8SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of FDS9934C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 6.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6.5A, 5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 650pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.03 Ohm @ 4.5 V @ N Channel
• Forward Transconductance Gfs (max / Min): 22 S, 14 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 10 V @ N Channel or +/- 12 V @ P Channel
• Continuous Drain Current: 6.5 A @ N Channel or 5 A @ P Channel
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Fall Time: 4 ns, 9 ns
• Rise Time: 9 ns, 9 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
Symbol
Switching Characteristics
t
t
t
t
Q
Q
Q
I
V
t
Q
Electrical Characteristics
Drain–Source Diode Characteristics and Maximum Ratings
the drain pins. R
d(on)
r
d(off)
f
S
rr
SD
g
gs
gd
rr
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
Diode Reverse Recovery
Time
Diode Reverse Recovery
Charge
JC
is guaranteed by design while R
a) 78°C/W when
Parameter
mounted on a
0.5 in
copper
2
pad of 2 oz
(Note 2)
CA
Q1
V
V
Q2
V
V
Q1
V
Q2
V
V
V
Q1
I
Q2
I
is determined by the user's board design.
F
F
(continued)
DD
GS
DD
GS
DS
DS
GS
GS
= 6.5 A, d
= -3.2 A, d
= 10 V, I
= –6 V, I
= 10 V, I
= 4.5V, R
= –6V,
= –4.5V, R
= 0 V, I
= 0 V, I
Test Conditions
b) 125°C/W when
D
D
D
mounted on a .02 in
pad of 2 oz copper
S
S
I
GEN
iF
D
= 1 A,
= 3 A, V
= –3.2 A,V
iF
= 1.3 A
= -2.0 A
GEN
/d
/d
= –1A,
t
= 6
t
= 100 A/µs
= 100 A/µs
= 6
T
A
= 25°C unless otherwise noted
GS
(Note 2)
(Note 2)
GS
= 4.5V
= –4.5 V
2
Type Min
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
c) 135°C/W when mounted on a
minimum pad.
Typ Max Units
0.73
–0.8
6.2
8.7
1.2
2.1
1.7
2.1
16
15
25
15
20
8
9
9
4
9
5
7
–1.3
–1.2
1.3
1.2
16
29
17
18
26
41
19
12
9
9
FDS9934C Rev D(W)
nC
nC
nC
nC
nS
ns
ns
ns
ns
A
V