FDS9934C Fairchild Semiconductor, FDS9934C Datasheet - Page 7

• Manufacturer Part Number: FDS9934C
• Description: MOSFET N/P-CH DUAL 20V 8SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of FDS9934C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 6.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6.5A, 5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 650pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.03 Ohm @ 4.5 V @ N Channel
• Forward Transconductance Gfs (max / Min): 22 S, 14 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 10 V @ N Channel or +/- 12 V @ P Channel
• Continuous Drain Current: 6.5 A @ N Channel or 5 A @ P Channel
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Fall Time: 4 ns, 9 ns
• Rise Time: 9 ns, 9 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics: Q2 (P-Channel)
5
4
3
2
1
0
0.01
Figure 19. Maximum Safe Operating Area.
100
0.1
10
0
Figure 17. Gate Charge Characteristics.
1
0.1
I
D
0.001
= -5A
R
0.01
0.1
DS(ON)
SINGLE PULSE
R
0.0001
1
V
JA
T
GS
A
= 135
LIMIT
= 25
= -4.5V
2
D = 0.5
0.2
o
0.1
o
0.05
C/W
C
0.02
-V
0.01
DS
, DRAIN-SOURCE VOLTAGE (V)
Q
g
1
, GATE CHARGE (nC)
SINGLE PULSE
4
DC
0.001
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
10s
Figure 21. Transient Thermal Response Curve.
1s
100ms
6
V
10ms
DS
10
= -4V
1ms
0.01
-6V
100 s
8
-8V
100
10
0.1
t
1
, TIME (sec)
1600
1200
800
400
50
40
30
20
10
0
0.001
0
Figure 18. Capacitance Characteristics.
0
1
Figure 20. Single Pulse Maximum
C
rss
0.01
4
-V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.1
C
10
oss
t
8
1
, TIME (sec)
1
Duty Cycle, D = t
P(pk)
T
R
J
R
JA
- T
12
JA
(t) = r(t) * R
100
A
= 135
C
10
= P * R
t
1
iss
t
2
SINGLE PULSE
R
o
C/W
JA
T
A
JA
= 135°C/W
1
FDS9934C Rev D(W)
16
= 25°C
JA
(t)
100
/ t
2
f = 1 MHz
V
GS
1000
= 0 V
1000
20