FDS9934C Fairchild Semiconductor, FDS9934C Datasheet - Page 2

• Manufacturer Part Number: FDS9934C
• Description: MOSFET N/P-CH DUAL 20V 8SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of FDS9934C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 6.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6.5A, 5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 650pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.03 Ohm @ 4.5 V @ N Channel
• Forward Transconductance Gfs (max / Min): 22 S, 14 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 10 V @ N Channel or +/- 12 V @ P Channel
• Continuous Drain Current: 6.5 A @ N Channel or 5 A @ P Channel
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Fall Time: 4 ns, 9 ns
• Rise Time: 9 ns, 9 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BV
I
I
V
? ? ? T
R
I
g
C
C
C
R
Electrical Characteristics
Off Characteristics
Dynamic Characteristics
Symbol
DSS
GSS
D(on)
BV
FS
V
GS(th)
DS(on)
iss
oss
rss
G
J
DSS
T
GS(th)
DSS
J
Gate-Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transcoductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Parameter
V
V
V
V
I
I
V
V
V
V
V
V
V
V
V
V
Q1
V
Q2
V
V
V
V
I
I
V
V
D
D
D
D
f = 1.0 MHz
f = 1.0 MHz
GS
GS
DS
DS
GS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
GS
DS
DS
= 250 uA, Referenced to 25°C
= 250 uA, Referenced to 25°C
= 250 A, Referenced to 25 C
= –250 A, Referenced to 25 C
= 4.5 V, I
= –4.5 V,I
= V
= V
= –5 V,
= 5 V,
= 10V,
= –10 V, V
= 0 V,
= 0 V,
= 16V,
= –16V,
= ±8 V,
= ±12 V, V
= 4.5 V,
= 2.5 V,
= –4.5 V, I
= –2.5 V, I
= 4.5V,
= –4.5 V, V
= 15 mV,
T
Test Conditions
GS
GS
A
= 25°C unless otherwise noted
,
,
D
D
V
I
I
V
V
V
I
I
I
I
=6.5A, T
I
I
D
D
D
D
D
D
D
D
= –3.2 A, T
D
D
V
DS
DS
f = 1.0 MHz
GS
GS
DS
DS
GS
GS
= 250 µA
= –250 µA
= 250 µA
= 250 µA
= 6.5 A
= 5.4 A
= –3.2 A
= –1.0 A
= 6.5 A
= – 5.5 A
= 5 V
= – 5 V
= 0 V
= 0 V
= 0 V
= 0 V
= 0 V,
= 0 V,
J
=125 C
J
=125 C
Type Min
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
–0.6
20
–16
–20
0.6
15
Typ Max Units
–14
650
955
150
215
115
1.4
4.9
–3
14
–0.9
25
35
35
43
64
55
22
14
85
3
1
±100
±100
–1.2
1.5
–1
30
43
50
55
90
76
FDS9934C Rev D(W)
1
mV/ C
mV/ C
m
m
nA
pF
pF
pF
V
A
S
S
V
A