STS8C5H30L STMicroelectronics, STS8C5H30L Datasheet

MOSFET N/P-CH 30V 8A/5.4A 8SOIC

STS8C5H30L

Manufacturer Part Number
STS8C5H30L
Description
MOSFET N/P-CH 30V 8A/5.4A 8SOIC
Manufacturer
STMicroelectronics
Datasheet

Specifications of STS8C5H30L

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
22 mOhm @ 4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8A, 5.4A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
10nC @ 5V
Input Capacitance (ciss) @ Vds
857pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.022 Ohms
Forward Transconductance Gfs (max / Min)
8.5 S, 10 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
8 A / 4.2 A
Power Dissipation
1.6 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
7 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4398-2

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Features
Application
Description
The STS8C5H30L is a Power MOSFET realized
with the latest development of STMicroelectronics
unique “single feature size” strip-based process.
The resulting transistor shows extremely high
packing density for low on-resistance, rugged
avalanche characteristics and less critical
alignment steps therefore a remarkable
manufacturing reproducibility.
Table 1.
Note:
June 2010
STS8C5H30L(N-channel)
STS8C5H30L(P-channel)
Conduction losses reduced
Switching losses reduced
Low threshold drive
Standard outline for easy automated surface
mount assembly
Switching applications
N-channel 30 V, 0.018 Ω , 8 A, P-channel 30 V, 0.045 Ω , 5 A SO-8
STS8C5H30L
Part number
Type
Device summary
For the p-channel MOSFET actual polarity of voltages and current has to be reversed
V
30 V
30 V
DSS
< 0.022 Ω
< 0.055 Ω
R
max
DS(on)
S8C5H30L
Marking
low gate charge STripFET™ III MOSFET
Doc ID 10809 Rev 6
8 A
5 A
I
D
Figure 1.
Package
SO-8
Internal schematic diagram
STS8C5H30L
SO-8
Tape and reel
Packaging
www.st.com
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Related parts for STS8C5H30L

STS8C5H30L Summary of contents

Page 1

... Application ■ Switching applications Description The STS8C5H30L is a Power MOSFET realized with the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/ Doc ID 10809 Rev 6 STS8C5H30L . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... STS8C5H30L 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate- source voltage GS Drain current (continuos single operating Drain current (continuos single operating (1) I Drain current (pulsed) DM Total dissipation TOT Total dissipation Storage temperature stg T Operating junction temperature j 1. Pulse width limited by safe operating area Table 3 ...

Page 4

... A n-ch 8 2 n-ch 857 p-ch 1350 n-ch 147 p-ch 490 n-ch 20 p-ch 130 n- p-ch 12.5 n-ch 2.5 p- n-ch 2.3 p-ch 3 STS8C5H30L Max. Unit µA 10 µA ±100 nA ±100 nA 2.5 V 2.5 V Ω 0.022 Ω 0.055 Ω 0.025 Ω 0.075 Max. Unit ...

Page 5

... STS8C5H30L Table 6. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off delay time d(off) t Fall time f Table 7. Source drain diode Symbol I Source-drain current SD Source-drain current (1) I SDM (pulsed) (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge ...

Page 6

... Tj=150°C Tc=25°C 0.1 Sinlge pulse 0.01 0.1 1 Figure 4. Output characteristics n-ch Figure 6. Transconductance n-ch 6/14 Figure 3. AM03310v1 1ms 10ms 100ms (V) DS Figure 5. Figure 7. Doc ID 10809 Rev 6 STS8C5H30L Thermal impedance n-ch Transfer characteristics n-ch Static drain-source on resistance n- ch ...

Page 7

... STS8C5H30L Figure 8. Gate charge vs. gate-source voltage n-ch Figure 10. Normalized gate threshold voltage vs. temperature n-ch Figure 12. Source-drain diode forward characteristics n-ch Figure 9. Capacitance variations n-ch Figure 11. Normalized on resistance vs. temperature n-ch Figure 13. Normalized breakdown voltage vs. temperature n-ch Doc ID 10809 Rev 6 Electrical characteristics 7/14 ...

Page 8

... Tj=150°C Tc=25°C 0.1 Sinlge pulse 0.01 0.1 1 Figure 16. Output characteristics p-ch Figure 18. Transconductance p-ch 8/14 Figure 15. Thermal impedance p-ch AM03311v1 1ms 10ms 100ms (V) DS Figure 17. Transfer characteristics p-ch Figure 19. Static drain-source on resistance Doc ID 10809 Rev 6 STS8C5H30L p-ch ...

Page 9

... STS8C5H30L Figure 20. Gate charge vs. gate-source voltage p-ch Figure 22. Normalized gate threshold voltage vs. temperature p-ch Figure 24. Source-drain diode forward characteristics p-ch Figure 21. Capacitance variations p-ch Figure 23. Normalized on resistance vs. temperature p-ch Figure 25. Normalized breakdown voltage vs. temperature p-ch Doc ID 10809 Rev 6 Electrical characteristics 9/14 ...

Page 10

... Figure 26. Switching times test circuit for resistive load Figure 28. Test circuit for inductive load switching and diode recovery times Figure 30. Unclamped inductive waveform 10/14 Figure 27. Gate charge test circuit Figure 29. Unclamped inductive load test circuit Figure 31. Switching time waveform Doc ID 10809 Rev 6 STS8C5H30L ...

Page 11

... STS8C5H30L 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ® ECOPACK trademark. Doc ID 10809 Rev 6 Package mechanical data ® ...

Page 12

... Doc ID 10809 Rev 6 STS8C5H30L inch MIN. TYP. 0.003 0.025 0.013 0.007 0.010 45 (typ.) 0.188 0.228 0.050 0.150 0.14 0.015 8 (max.) MAX. 0.068 0.009 ...

Page 13

... STS8C5H30L 5 Revision history Table 8. Revision history Date 17-Sep-2004 31-Oct-2006 30-Jan-2007 23-Jul-2007 23-Feb-2009 10-Jun-2010 Revision 1 First revision. 2 The document has been reformatted. Table 3 typo mistake on Figure 14 4 has been updated. Figure 2, Figure 3, Figure 14 5 Table 4: On/off 6 Updated V in GS(th) Doc ID 10809 Rev 6 ...

Page 14

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 14/14 Please Read Carefully: © 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 10809 Rev 6 STS8C5H30L ...

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