STS8C5H30L STMicroelectronics, STS8C5H30L Datasheet - Page 10

• Manufacturer Part Number: STS8C5H30L
• Description: MOSFET N/P-CH 30V 8A/5.4A 8SOIC
• Manufacturer: STMicroelectronics

Specifications of STS8C5H30L

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A, 5.4A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 5V
• Input Capacitance (ciss) @ Vds: 857pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.022 Ohms
• Forward Transconductance Gfs (max / Min): 8.5 S, 10 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 8 A / 4.2 A
• Power Dissipation: 1.6 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 7 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4398-2

Test circuits
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Figure 26. Switching times test circuit for
Figure 28. Test circuit for inductive load
Figure 30. Unclamped inductive waveform
Test circuits
resistive load
switching and diode recovery times
Doc ID 10809 Rev 6
Figure 27. Gate charge test circuit
Figure 29. Unclamped inductive load test
Figure 31. Switching time waveform
circuit
STS8C5H30L