STS8C5H30L STMicroelectronics, STS8C5H30L Datasheet - Page 10
![MOSFET N/P-CH 30V 8A/5.4A 8SOIC](/photos/1/38/13851/497-8-soic_sml.jpg)
STS8C5H30L
Manufacturer Part Number
STS8C5H30L
Description
MOSFET N/P-CH 30V 8A/5.4A 8SOIC
Manufacturer
STMicroelectronics
Datasheet
1.STS8C5H30L.pdf
(14 pages)
Specifications of STS8C5H30L
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
22 mOhm @ 4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8A, 5.4A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
10nC @ 5V
Input Capacitance (ciss) @ Vds
857pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.022 Ohms
Forward Transconductance Gfs (max / Min)
8.5 S, 10 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
8 A / 4.2 A
Power Dissipation
1.6 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
7 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4398-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STS8C5H30L
Manufacturer:
ST
Quantity:
20 000
Test circuits
3
10/14
Figure 26. Switching times test circuit for
Figure 28. Test circuit for inductive load
Figure 30. Unclamped inductive waveform
Test circuits
resistive load
switching and diode recovery times
Doc ID 10809 Rev 6
Figure 27. Gate charge test circuit
Figure 29. Unclamped inductive load test
Figure 31. Switching time waveform
circuit
STS8C5H30L