STS8C5H30L STMicroelectronics, STS8C5H30L Datasheet - Page 4

MOSFET N/P-CH 30V 8A/5.4A 8SOIC

STS8C5H30L

Manufacturer Part Number
STS8C5H30L
Description
MOSFET N/P-CH 30V 8A/5.4A 8SOIC
Manufacturer
STMicroelectronics
Datasheet

Specifications of STS8C5H30L

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
22 mOhm @ 4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8A, 5.4A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
10nC @ 5V
Input Capacitance (ciss) @ Vds
857pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.022 Ohms
Forward Transconductance Gfs (max / Min)
8.5 S, 10 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
8 A / 4.2 A
Power Dissipation
1.6 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
7 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4398-2

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Electrical characteristics
2
4/14
Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5.
For the p-channel MOSFET actual polarity of voltages and current has to be reversed
V
Symbol
Symbol
R
V
(BR)DSS
CASE
g
I
I
C
DS(on)
GS(th)
C
C
Q
Q
DSS
GSS
fs
Q
oss
rss
iss
gs
gd
g
(1)
= 25 °C unless otherwise specified)
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
Doc ID 10809 Rev 6
I
V
V
T
V
V
V
V
V
V
V
V
V
V
V
N-channel
V
V
P-channel
V
V
(see Figure 27)
D
C
DS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DS
GS
DD
GS
DD
GS
= 250 µA, V
=125 °C
Test conditions
=Max rating,
Test conditions
=24 V I
=5 V
= 5 V
= Max rating
= ±16 V
= ±16 V
= V
= 10 V, I
= 10 V, I
= 4.5 V, I
= 4.5 V, I
= 15 V, I
= 15 V, I
= 25 V, f = 1 MHz,
= 0
= 24 V I
GS
, I
D
D
D
D
D
D
D
D
=8 A
D
GS
= 250 µA
= 4 A
= 2.5 A
= 4 A
= 2.5 A
= 4 A
= 2.5 A
= 4 A
= 0
n-ch
p-ch
n-ch
p-ch
n-ch
p-ch
n-ch
p-ch
n-ch
p-ch
n-ch
p-ch
n-ch
p-ch
n-ch
p-ch
n-ch
p-ch
n-ch
p-ch
n-ch
p-ch
n-ch
p-ch
n-ch
p-ch
Min.
Min.
30
30
1
1
0.018
0.045
0.020
0.070
1350
Typ.
Typ.
12.5
857
147
490
130
1.6
1.6
8.5
2.5
2.3
10
20
7
5
3
STS8C5H30L
0.022
0.055
0.025
0.075
Max.
±100
±100
Max.
2.5
2.5
10
10
16
1
Unit
Unit
nC
nC
nC
nC
nC
nC
µA
µA
nA
nA
pF
pF
pF
pF
pF
pF
V
V
V
V
S
S

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