STS8C5H30L STMicroelectronics, STS8C5H30L Datasheet - Page 12
STS8C5H30L
Manufacturer Part Number
STS8C5H30L
Description
MOSFET N/P-CH 30V 8A/5.4A 8SOIC
Manufacturer
STMicroelectronics
Datasheet
1.STS8C5H30L.pdf
(14 pages)
Specifications of STS8C5H30L
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
22 mOhm @ 4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8A, 5.4A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
10nC @ 5V
Input Capacitance (ciss) @ Vds
857pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.022 Ohms
Forward Transconductance Gfs (max / Min)
8.5 S, 10 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
8 A / 4.2 A
Power Dissipation
1.6 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
7 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4398-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STS8C5H30L
Manufacturer:
ST
Quantity:
20 000
Package mechanical data
12/14
DIM.
a1
a2
a3
b1
c1
e3
M
A
C
D
E
F
S
b
e
L
MIN.
0.65
0.35
0.19
0.25
0.1
4.8
5.8
3.8
0.4
Doc ID 10809 Rev 6
SO-8 MECHANICAL DATA
mm.
TYP
1.27
3.81
MAX.
1.75
0.25
1.65
0.85
0.48
0.25
1.27
0.5
5.0
6.2
4.0
0.6
45 (typ.)
8 (max.)
0.003
0.025
0.013
0.007
0.010
0.188
0.228
0.015
MIN.
0.14
0.050
0.150
TYP.
inch
STS8C5H30L
MAX.
0.068
0.009
0.064
0.033
0.018
0.010
0.019
0.196
0.244
0.157
0.050
0.023