STS8C5H30L STMicroelectronics, STS8C5H30L Datasheet - Page 8

• Manufacturer Part Number: STS8C5H30L
• Description: MOSFET N/P-CH 30V 8A/5.4A 8SOIC
• Manufacturer: STMicroelectronics

Specifications of STS8C5H30L

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A, 5.4A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 5V
• Input Capacitance (ciss) @ Vds: 857pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.022 Ohms
• Forward Transconductance Gfs (max / Min): 8.5 S, 10 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 8 A / 4.2 A
• Power Dissipation: 1.6 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 7 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4398-2

Electrical characteristics
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Figure 14. Safe operating area p-ch
Figure 16. Output characteristics p-ch
Figure 18. Transconductance p-ch
0.01
100
(A)
10
0.1
I
D
1
0.1
Tc=25°C
Tj=150°C
Sinlge
pulse
1
10
V
DS
(V)
Doc ID 10809 Rev 6
100ms
1s
10ms
1ms
AM03311v1
Figure 15. Thermal impedance p-ch
Figure 17. Transfer characteristics p-ch
Figure 19. Static drain-source on resistance
p-ch
STS8C5H30L