STS8C5H30L STMicroelectronics, STS8C5H30L Datasheet - Page 7

• Manufacturer Part Number: STS8C5H30L
• Description: MOSFET N/P-CH 30V 8A/5.4A 8SOIC
• Manufacturer: STMicroelectronics

Specifications of STS8C5H30L

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A, 5.4A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 5V
• Input Capacitance (ciss) @ Vds: 857pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.022 Ohms
• Forward Transconductance Gfs (max / Min): 8.5 S, 10 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 8 A / 4.2 A
• Power Dissipation: 1.6 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 7 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4398-2

STS8C5H30L
Figure 8.
Figure 10. Normalized gate threshold voltage
Figure 12. Source-drain diode forward
Gate charge vs. gate-source
voltage n-ch
vs. temperature n-ch
characteristics n-ch
Doc ID 10809 Rev 6
Figure 9.
Figure 11. Normalized on resistance vs.
Figure 13. Normalized breakdown voltage vs.
Capacitance variations n-ch
temperature n-ch
temperature n-ch
Electrical characteristics
7/14