SI2303CDS-T1-GE3 Vishay, SI2303CDS-T1-GE3 Datasheet - Page 2
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SI2303CDS-T1-GE3
Manufacturer Part Number
SI2303CDS-T1-GE3
Description
MOSFET P-CH 30V 2.7A SOT23-3
Manufacturer
Vishay
Datasheet
1.SI2303CDS-T1-GE3.pdf
(7 pages)
Specifications of SI2303CDS-T1-GE3
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
190 mOhm @ 1.9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
8nC @ 10V
Input Capacitance (ciss) @ Vds
155pF @ 15V
Power - Max
2.3W
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.19 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.9 A
Power Dissipation
1000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-2.7A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
330mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
-3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI2303CDS-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI2303CDS-T1-GE3
Manufacturer:
Vishay/Siliconix
Quantity:
31 407
Company:
Part Number:
SI2303CDS-T1-GE3
Manufacturer:
ADI
Quantity:
10
Part Number:
SI2303CDS-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI2303CDS-T1-GE3/N3
Manufacturer:
STANSON
Quantity:
20 000
Si2303CDS
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
MOSFET SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
b
a
a
a
a
J
ΔV
= 25 °C, unless otherwise noted
Symbol
ΔV
R
V
GS(th)
I
t
t
t
t
I
C
I
DS(on)
V
GS(th)
D(on)
C
C
Q
V
Q
d(on)
d(off)
d(on)
d(off)
GSS
DSS
I
Q
Q
DS
g
R
SM
I
t
t
t
oss
t
t
t
t
DS
rss
SD
iss
S
rr
a
b
fs
gs
gd
r
f
r
f
rr
g
g
/T
/T
J
J
V
V
I
I
I
F
DS
D
D
DS
V
V
= - 1.5 A, di/dt = 100 A/µs, T
≅ - 1.5 A, V
DS
= - 1.5 A, V
DS
= - 15 V, V
= - 15 V, V
= - 30 V, V
V
V
= - 15 V, V
V
V
V
V
V
V
V
V
DS
GS
DS
GS
DS
DS
DD
DD
DS
DS
Test Conditions
= - 4.5 V, I
= V
= - 10 V, I
= 0 V, V
≤ - 5 V, V
= 0 V, I
= - 30 V, V
= - 5 V, I
= - 15 V, R
= - 15 V, R
I
D
T
I
f = 1 MHz
S
GEN
GS
GS
GEN
= - 250 µA
GS
C
= - 1.5 A
GS
= 25 °C
GS
, I
= - 4.5 V, I
= - 10 V, I
D
= - 4.5 V, R
D
= - 10 V, R
GS
= 0 V, T
= 0 V, f = 1 MHz
D
= - 250 µA
GS
D
= - 250 µA
D
= - 1.9 A
GS
L
L
= ± 20 V
= - 1.9 A
= - 1.4 A
= - 10 V
= 10 Ω
= 10 Ω
= 0 V
J
D
D
= 55 °C
J
= - 1.9 A
G
= - 1.9 A
G
= 25 °C
= 1 Ω
= 1 Ω
Min.
- 30
- 10
1.7
- 1
0.158
0.275
Typ.
- 0.8
- 27
155
S-83053-Rev. B, 29-Dec-08
3.8
0.6
8.5
35
25
11
11
36
37
12
17
12
2
4
2
1
4
8
9
9
5
Document Number: 69991
± 100
- 1.75
0.190
0.330
Max.
- 1.2
- 10
- 10
- 3
- 1
17
18
18
16
44
45
18
14
26
14
8
4
8
mV/°C
Unit
nA
µA
nC
nC
pF
ns
ns
ns
Ω
Ω
V
V
A
S
A
V