SI2303CDS-T1-GE3 Vishay, SI2303CDS-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI2303CDS-T1-GE3
• Description: MOSFET P-CH 30V 2.7A SOT23-3
• Manufacturer: Vishay

Specifications of SI2303CDS-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 1.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 10V
• Input Capacitance (ciss) @ Vds: 155pF @ 15V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.19 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.9 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -2.7A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 330mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI2303CDS-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 69991
S-83053-Rev. B, 29-Dec-08
0.5
0.4
0.3
0.2
0.1
10
10
0
8
6
4
2
0
8
6
4
2
0
On-Resistance vs. Drain Current and Gate Voltage
0
0
0
I
D
= 1.9 A
V
GS
2
1
V
= 4.5 V
DS
Output Characteristics
1
Q
- Drain-to-Source Voltage (V)
g
I
D
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
4
2
V
DS
2
V
GS
= 15 V
6
3
= 10 V
V
GS
V
V
= 10 thru 5 V
DS
V
GS
3
GS
8
= 24 V
4
= 4 V
= 3 V
10
5
4
300
240
180
120
1.0
0.8
0.6
0.4
0.2
0.0
1.6
1.4
1.2
1.0
0.8
0.6
60
0
- 50
0
0
On-Resistance vs. Junction Temperature
C
rss
- 25
6
V
V
DS
T
GS
1
Transfer Characteristics
0
J
- Drain-to-Source Voltage (V)
C
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
V
T
oss
GS
C
25
= 25 °C
Capacitance
12
= 10 V, I
T
C
= 125 °C
C
50
2
Vishay Siliconix
iss
D
V
= 1.9 A
Si2303CDS
18
GS
75
= 4.5 V, I
www.vishay.com
100
T
3
C
24
= - 55 °C
D
= 1.4 A
125
150
30
4
3