SI2303CDS-T1-GE3 Vishay, SI2303CDS-T1-GE3 Datasheet - Page 5
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SI2303CDS-T1-GE3
Manufacturer Part Number
SI2303CDS-T1-GE3
Description
MOSFET P-CH 30V 2.7A SOT23-3
Manufacturer
Vishay
Datasheet
1.SI2303CDS-T1-GE3.pdf
(7 pages)
Specifications of SI2303CDS-T1-GE3
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
190 mOhm @ 1.9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
8nC @ 10V
Input Capacitance (ciss) @ Vds
155pF @ 15V
Power - Max
2.3W
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.19 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.9 A
Power Dissipation
1000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-2.7A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
330mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
-3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI2303CDS-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI2303CDS-T1-GE3
Manufacturer:
Vishay/Siliconix
Quantity:
31 407
Company:
Part Number:
SI2303CDS-T1-GE3
Manufacturer:
ADI
Quantity:
10
Part Number:
SI2303CDS-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI2303CDS-T1-GE3/N3
Manufacturer:
STANSON
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69991
S-83053-Rev. B, 29-Dec-08
3.0
2.4
1.8
1.2
0.6
0.0
0
Power Derating, Junction-to-Foot
25
D
T
C
is based on T
- Case Temperature (°C)
50
75
J(max.)
3.0
2.4
1.8
1.2
0.6
0.0
100
0
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
25
T
150
C
Current Derating*
50
- Case Temperature (°C)
75
100
1.0
0.8
0.6
0.4
0.2
0.0
125
0
Power Derating, Junction-to-Ambient
150
25
T
A
- Ambient Temperature (°C)
50
75
Vishay Siliconix
Si2303CDS
100
www.vishay.com
125
150
5