SI2303CDS-T1-GE3 Vishay, SI2303CDS-T1-GE3 Datasheet - Page 4
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SI2303CDS-T1-GE3
Manufacturer Part Number
SI2303CDS-T1-GE3
Description
MOSFET P-CH 30V 2.7A SOT23-3
Manufacturer
Vishay
Datasheet
1.SI2303CDS-T1-GE3.pdf
(7 pages)
Specifications of SI2303CDS-T1-GE3
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
190 mOhm @ 1.9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
8nC @ 10V
Input Capacitance (ciss) @ Vds
155pF @ 15V
Power - Max
2.3W
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.19 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.9 A
Power Dissipation
1000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-2.7A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
330mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
-3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI2303CDS-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI2303CDS-T1-GE3
Manufacturer:
Vishay/Siliconix
Quantity:
31 407
Company:
Part Number:
SI2303CDS-T1-GE3
Manufacturer:
ADI
Quantity:
10
Part Number:
SI2303CDS-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI2303CDS-T1-GE3/N3
Manufacturer:
STANSON
Quantity:
20 000
Si2303CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.1
10
2.2
2.0
1.8
1.6
1.4
1
0.0
- 50
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
T
- Temperature (°C)
J
= 150 °C
0.6
50
I
D
75
= 250 µA
0.8
0.01
100
0.1
10
1
0.1
T
1.0
J
Limited by R
= 25 °C
125
* V
Single Pulse
T
GS
A
= 25 °C
1.2
> minimum V
150
V
DS
DS(on)*
- Drain-to-Source Voltage (V)
Safe Operating Area
1
GS
BVDSS Limited
at which R
10
DS(on)
0.5
0.4
0.3
0.2
0.1
0.0
6
5
4
3
2
1
0
0.01
0
is specified
On-Resistance vs. Gate-to-Source Voltage
10 ms
100 µs
1 ms
100 ms
1 s, 10 s
DC
0.1
100
4
V
GS
Single Pulse Power
- Gate-to-Source Voltage (V)
8
1
Time (s)
S-83053-Rev. B, 29-Dec-08
Document Number: 69991
12
10
I
T
D
T
J
J
100
= 1.9 A
= 125 °C
16
= 25 °C
1000
20