SI2303CDS-T1-GE3 Vishay, SI2303CDS-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI2303CDS-T1-GE3
• Description: MOSFET P-CH 30V 2.7A SOT23-3
• Manufacturer: Vishay

Specifications of SI2303CDS-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 1.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 10V
• Input Capacitance (ciss) @ Vds: 155pF @ 15V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.19 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.9 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -2.7A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 330mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI2303CDS-T1-GE3TR

Si2303CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.1
10
2.2
2.0
1.8
1.6
1.4
1
0.0
- 50
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
T
- Temperature (°C)
J
= 150 °C
0.6
50
I
D
75
= 250 µA
0.8
0.01
100
0.1
10
1
0.1
T
1.0
J
Limited by R
= 25 °C
125
* V
Single Pulse
T
GS
A
= 25 °C
1.2
> minimum V
150
V
DS
DS(on)*
- Drain-to-Source Voltage (V)
Safe Operating Area
1
GS
BVDSS Limited
at which R
10
DS(on)
0.5
0.4
0.3
0.2
0.1
0.0
6
5
4
3
2
1
0
0.01
0
is specified
On-Resistance vs. Gate-to-Source Voltage
10 ms
100 µs
1 ms
100 ms
1 s, 10 s
DC
0.1
100
4
V
GS
Single Pulse Power
- Gate-to-Source Voltage (V)
8
1
Time (s)
S-83053-Rev. B, 29-Dec-08
Document Number: 69991
12
10
I
T
D
T
J
J
100
= 1.9 A
= 125 °C
16
= 25 °C
1000
20