BSD316SN L6327 Infineon Technologies, BSD316SN L6327 Datasheet - Page 2

• Manufacturer Part Number: BSD316SN L6327
• Description: MOSFET N-CH 30V 1.4A SOT-363
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSD316SN L6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 160 mOhm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.4A
• Vgs(th) (max) @ Id: 2V @ 3.7µA
• Gate Charge (qg) @ Vgs: 0.6nC @ 5V
• Input Capacitance (ciss) @ Vds: 94pF @ 15V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSD316SN L6327; BSD316SN L6327INTR; SP000442462

Rev 2.3
1)
of the PCB.
Parameter
Thermal characteristics
Thermal resistance,
junction - ambient
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source leakage current
Gate-source leakage current
Drain-source on-state resistance
Transconductance
Performed on 40mm
2
FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both sides
j
=25 °C, unless otherwise specified
Symbol Conditions
R
V
V
I
I
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
thJA
DS(on)
minimal footprint
V
V
V
T
V
T
V
V
V
|V
I
D
page 2
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=150 °C
=1.1 A
DS
=V
=30 V, V
=30 V, V
=0 V, I
=20 V, V
=4.5 V, I
=10 V, I
|>2|I
GS
D
, I
|R
D
D
=250 µA
D
D
=3,7 µA
GS
GS
DS
DS(on)max
=1.4 A
=1.1 A
=0 V,
=0 V,
=0 V
1)
,
min.
1.2
30
-
-
-
-
-
-
-
Values
typ.
192
120
1.6
2.3
-
-
-
-
-
max.
250
100
100
280
160
2.0
BSD316SN
1
-
-
Unit
K/W
V
μA
nA
mΩ
S
2011-07-14