BSD316SN L6327 Infineon Technologies, BSD316SN L6327 Datasheet - Page 4

• Manufacturer Part Number: BSD316SN L6327
• Description: MOSFET N-CH 30V 1.4A SOT-363
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSD316SN L6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 160 mOhm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.4A
• Vgs(th) (max) @ Id: 2V @ 3.7µA
• Gate Charge (qg) @ Vgs: 0.6nC @ 5V
• Input Capacitance (ciss) @ Vds: 94pF @ 15V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSD316SN L6327; BSD316SN L6327INTR; SP000442462

Rev 2.3
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
10
10
10
0.375
0.125
10
10
0.25
DS
-1
-2
-3
0.5
1
0
A
10
0
); T
)
-1
0
A
p
=25 °C; D =0
40
10
0
V
10 ms
DC
T
DS
A
80
[°C]
1 ms
[V]
100 µs
10
10 µs
1
120
1 µs
160
10
page 4
2
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJA
=f(T
=f(t
10
10
10
10
A
1.5
0.5
3
2
1
0
); V
10
1
0
p
)
-5
0
0.01
0.02
0.1
GS
0.2
0.05
single pulse
0.5
≥10 V
10
20
p
-4
/T
40
10
-3
60
10
T
-2
t
p
A
80
[s]
[°C]
10
-1
100
10
120
0
BSD316SN
10
140
1
2011-07-14
160
10
2