BSD316SN L6327 Infineon Technologies, BSD316SN L6327 Datasheet - Page 7

• Manufacturer Part Number: BSD316SN L6327
• Description: MOSFET N-CH 30V 1.4A SOT-363
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSD316SN L6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 160 mOhm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.4A
• Vgs(th) (max) @ Id: 2V @ 3.7µA
• Gate Charge (qg) @ Vgs: 0.6nC @ 5V
• Input Capacitance (ciss) @ Vds: 94pF @ 15V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSD316SN L6327; BSD316SN L6327INTR; SP000442462

Rev 2.3
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
10
10
10
10
36
35
34
33
32
31
30
29
28
27
26
AV
-1
-2
1
0
-60
=f(T
10
); R
0
j
GS
); I
j(start)
=25 Ω
-20
D
=250 µA
10
20
1
t
T
AV
j
[°C]
[µs]
60
10
2
100
125 °C
100 °C
25 °C
140
10
page 7
3
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
8
7
6
5
4
3
2
1
0
V
g(th)
g s(th)
0
GS
gate
); I
DD
Q
D
=1.4 A pulsed
g s
0.25
Q
6 V
Q
gate
g
0.5
Q
[nC]
15 V
sw
Q
24 V
g d
0.75
BSD316SN
Q
g ate
2011-07-14
1