BSD316SN L6327 Infineon Technologies, BSD316SN L6327 Datasheet - Page 3

• Manufacturer Part Number: BSD316SN L6327
• Description: MOSFET N-CH 30V 1.4A SOT-363
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSD316SN L6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 160 mOhm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.4A
• Vgs(th) (max) @ Id: 2V @ 3.7µA
• Gate Charge (qg) @ Vgs: 0.6nC @ 5V
• Input Capacitance (ciss) @ Vds: 94pF @ 15V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSD316SN L6327; BSD316SN L6327INTR; SP000442462

Rev 2.3
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
rss
plateau
SD
iss
oss
gs
gd
g
rr
V
f =1 MHz
V
I
V
V
T
V
T
V
di
D
page 3
A
j
GS
DD
DD
GS
GS
R
=1.4 A, R
=25 °C
F
=25 °C
=15 V, I
/dt =100 A/µs
=0 V, V
=15 V, V
=15 V, I
=0 to 5 V
=0 V, I
F
F
DS
=1.4 A,
G
=1.4 A,
D
GS
=6 Ω
=1.4 A,
=15 V,
=10 V,
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
typ.
3.4
2.3
5.8
1.0
0.3
0.2
0.6
3.4
0.8
9.1
2.6
71
26
5
-
-
max.
0.5
5.6
1.1
BSD316SN
94
35
7
-
-
-
-
-
-
-
-
-
-
Unit
pF
ns
nC
V
A
V
ns
nC
2011-07-14