IPB100N06S3L-03 Infineon Technologies, IPB100N06S3L-03 Datasheet - Page 2
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IPB100N06S3L-03
Manufacturer Part Number
IPB100N06S3L-03
Description
MOSFET N-CH 55V 100A TO263-3-2
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPB100N06S3L-03.pdf
(9 pages)
Specifications of IPB100N06S3L-03
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.7 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
2.2V @ 230µA
Gate Charge (qg) @ Vgs
550nC @ 10V
Input Capacitance (ciss) @ Vds
26240pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.7 m Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
100 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Fall Time
77 ns
Minimum Operating Temperature
- 55 C
Rise Time
70 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPB100N06S3L-03INTR
IPB100N06S3L-03XTINTR
IPB100N06S3L-03XTINTR
IPB100N06S3L03XT
SP000087978
IPB100N06S3L-03XTINTR
IPB100N06S3L-03XTINTR
IPB100N06S3L03XT
SP000087978
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPB100N06S3L-03
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 1.1
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
2)
j
=25 °C, unless otherwise specified
Symbol
R
R
R
V
V
I
I
R
DSS
GSS
(BR)DSS
GS(th)
thJC
thJA
thJA
DS(on)
minimal footprint
6 cm
V
V
V
T
V
T
V
V
V
SMD version
V
V
SMD version
j
j
GS
DS
DS
DS
GS
GS
GS
GS
GS
=25 °C
=125 °C
page 2
=V
=55 V, V
=55 V, V
=0 V, I
=16 V, V
=5 V, I
=5 V, I
=10 V, I
=10 V, I
2
Conditions
cooling area
GS
, I
2)
D
D
D
D
= 1 mA
=78 A
=78 A,
D
D
=230 µA
GS
GS
DS
=80 A
=80 A,
=0 V,
=0 V,
=0 V
IPI100N06S3L-03, IPP100N06S3L-03
4)
min.
1.2
55
-
-
-
-
-
-
-
-
-
-
-
Values
0.01
typ.
1.7
3.7
3.4
2.5
2.2
1
1
-
-
-
-
-
IPB100N06S3L-03
max.
100
100
0.5
2.2
4.6
4.3
3.0
2.7
62
62
40
1
-
2007-11-07
Unit
K/W
V
µA
nA
m