IPB100N06S3L-03 Infineon Technologies, IPB100N06S3L-03 Datasheet - Page 6

• Manufacturer Part Number: IPB100N06S3L-03
• Description: MOSFET N-CH 55V 100A TO263-3-2
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB100N06S3L-03

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.7 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.2V @ 230µA
• Gate Charge (qg) @ Vgs: 550nC @ 10V
• Input Capacitance (ciss) @ Vds: 26240pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.7 m Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 100 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 77 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 70 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPB100N06S3L-03INTR; IPB100N06S3L-03XTINTR; IPB100N06S3L-03XTINTR; IPB100N06S3L03XT; SP000087978

Rev. 1.1
9 Typ. gate threshold voltage
V
parameter: I
11 Typical forward diode characteristicis
IF = f(V
parameter: T
GS(th)
10
10
10
10
2.5
1.5
0.5
= f(T
3
2
1
0
3
2
1
0
SD
-60
0
)
j
); V
D
j
0.2
-20
GS
= V
0.4
20
DS
175 °C
230µA
0.6
V
T
SD
j
60
[°C]
[V]
25 °C
0.8
2300µA
100
1
140
1.2
180
1.4
page 6
10 Typ. capacitances
C = f(V
12 Typ. avalanche characteristics
I
parameter: T
AV
= f(t
1000
100
10
10
10
10
1
5
4
3
AV
DS
0
1
)
); V
Coss
Ciss
IPI100N06S3L-03, IPP100N06S3L-03
Crss
j(start)
GS
5
= 0 V; f = 1 MHz
10
10
t
V
150°C
AV
DS
15
[µs]
[V]
IPB100N06S3L-03
100
20
100°C
25
2007-11-07
25°C
1000
30