IPB100N06S3L-03 Infineon Technologies, IPB100N06S3L-03 Datasheet - Page 6
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IPB100N06S3L-03
Manufacturer Part Number
IPB100N06S3L-03
Description
MOSFET N-CH 55V 100A TO263-3-2
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPB100N06S3L-03.pdf
(9 pages)
Specifications of IPB100N06S3L-03
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.7 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
2.2V @ 230µA
Gate Charge (qg) @ Vgs
550nC @ 10V
Input Capacitance (ciss) @ Vds
26240pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.7 m Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
100 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Fall Time
77 ns
Minimum Operating Temperature
- 55 C
Rise Time
70 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPB100N06S3L-03INTR
IPB100N06S3L-03XTINTR
IPB100N06S3L-03XTINTR
IPB100N06S3L03XT
SP000087978
IPB100N06S3L-03XTINTR
IPB100N06S3L-03XTINTR
IPB100N06S3L03XT
SP000087978
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPB100N06S3L-03
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 1.1
9 Typ. gate threshold voltage
V
parameter: I
11 Typical forward diode characteristicis
IF = f(V
parameter: T
GS(th)
10
10
10
10
2.5
1.5
0.5
= f(T
3
2
1
0
3
2
1
0
SD
-60
0
)
j
); V
D
j
0.2
-20
GS
= V
0.4
20
DS
175 °C
230µA
0.6
V
T
SD
j
60
[°C]
[V]
25 °C
0.8
2300µA
100
1
140
1.2
180
1.4
page 6
10 Typ. capacitances
C = f(V
12 Typ. avalanche characteristics
I
parameter: T
AV
= f(t
1000
100
10
10
10
10
1
5
4
3
AV
DS
0
1
)
); V
Coss
Ciss
IPI100N06S3L-03, IPP100N06S3L-03
Crss
j(start)
GS
5
= 0 V; f = 1 MHz
10
10
t
V
150°C
AV
DS
15
[µs]
[V]
IPB100N06S3L-03
100
20
100°C
25
2007-11-07
25°C
1000
30