IPB100N06S3L-03 Infineon Technologies, IPB100N06S3L-03 Datasheet - Page 9
![MOSFET N-CH 55V 100A TO263-3-2](/photos/5/52/55239/ipb100n06s3l-03_sml.jpg)
IPB100N06S3L-03
Manufacturer Part Number
IPB100N06S3L-03
Description
MOSFET N-CH 55V 100A TO263-3-2
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPB100N06S3L-03.pdf
(9 pages)
Specifications of IPB100N06S3L-03
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.7 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
2.2V @ 230µA
Gate Charge (qg) @ Vgs
550nC @ 10V
Input Capacitance (ciss) @ Vds
26240pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.7 m Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
100 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Fall Time
77 ns
Minimum Operating Temperature
- 55 C
Rise Time
70 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPB100N06S3L-03INTR
IPB100N06S3L-03XTINTR
IPB100N06S3L-03XTINTR
IPB100N06S3L03XT
SP000087978
IPB100N06S3L-03XTINTR
IPB100N06S3L-03XTINTR
IPB100N06S3L03XT
SP000087978
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPB100N06S3L-03
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 1.1
Revision History
Version
Data Sheet 2.1
Data Sheet 2.1
Data Sheet 2.1
Data Sheet 2.1
Data Sheet 2.1
Data Sheet 2.1
Data Sheet 2.1
Data Sheet 2.1
Data Sheet 2.1
Data Sheet 1.1
Data Sheet 1.1
Data Sheet 1.1
Data Sheet 1.1
Date
page 9
15.12.2006
15.12.2006
15.12.2006
15.12.2006
15.12.2006
15.12.2006
15.12.2006
15.12.2006
15.12.2006
07.11.2007
07.11.2007
07.11.2007
07.11.2007
IPI100N06S3L-03, IPP100N06S3L-03
Changes
Removal of ordering code
Update of Infineon Logo
Implementation of avalanche
current single pulse
Removal of ESD class
Update of Infineon address
Removal of foot note 3, avalanche
diagrams
Update of trr and Qrr typ
Update of disclaimer
Implementation of RoHS and AEC
logo, update of feature list
Update of data sheet layout
Adaptation of Ias from 200A to
100A
implementation of footnote 2 for
Eas specification
removal of Vdg specification from
data sheet
IPB100N06S3L-03
2007-11-07